GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

Wei Chih Lai; Cheng Hsiung Yen; Shoou Jinn Chang

doi:10.7567/APEX.6.102101

GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

Wei Chih Lai
, Cheng Hsiung Yen
, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

Original language	English
Article number	102101
Journal	Applied Physics Express
Volume	6
Issue number	10
DOIs	https://doi.org/10.7567/APEX.6.102101
Publication status	Published - 2013 Oct

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells",

abstract = "We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23\% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6\%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7\%, respectively).",

author = "Lai, \{Wei Chih\} and Yen, \{Cheng Hsiung\} and Chang, \{Shoou Jinn\}",

year = "2013",

month = oct,

doi = "10.7567/APEX.6.102101",

language = "English",

volume = "6",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

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T1 - GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

AU - Lai, Wei Chih

AU - Yen, Cheng Hsiung

AU - Chang, Shoou Jinn

PY - 2013/10

Y1 - 2013/10

N2 - We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

AB - We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

UR - https://www.scopus.com/pages/publications/84887704997

UR - https://www.scopus.com/pages/publications/84887704997#tab=citedBy

U2 - 10.7567/APEX.6.102101

DO - 10.7567/APEX.6.102101

M3 - Article

AN - SCOPUS:84887704997

SN - 1882-0778

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

IS - 10

M1 - 102101

ER -

GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

Abstract

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