GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching

Nan Ming Lin, Shih Chang Shei, Shoou Jinn Chang, Wei Chih Lai, Ya Yu Yang, Wun Cin Lin, Hsin Ming Lo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the authors report that GaN-based LEDs prepared on 1.2μm, 1.4μm, and 1.7μm height of cone-shaped patterned sapphire substrates (CSPSS) with the formation of air voids at GaN/cone-shaped-patterned-sapphire- substrate interface by laser scribing and lateral etching with one-step MOCVD growth. With CSPSS, it can be seen that output powers were all significantly larger than that of LED with flat substrate (FS). Assisted by 20 min lateral etching, it was found that peripheral pyramid-like air-voids were formed on top of each cone of the CSPSS with 1.7μm height and the light output power increased by 13.8%, compared with the result of the CSPSS with 1.2μm height. Furthermore, it was also found that output power of LED prepared on 1.7μm height of CSPSS with 20 min lateral etching was 6.2 and 3.1% larger than those of LEDs prepared on 1.2μm and 1.4μm height of CSPSS with 20 min lateral etching, respectively.

Original languageEnglish
Title of host publicationEquipment Manufacturing Technology
Pages542-546
Number of pages5
DOIs
Publication statusPublished - 2012
Event2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011 - Guilin, China
Duration: 2011 Dec 162011 Dec 18

Publication series

NameAdvanced Materials Research
Volume422
ISSN (Print)1022-6680

Other

Other2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011
CountryChina
CityGuilin
Period11-12-1611-12-18

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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