GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template

D. W. Lin; C. C. Lin; C. H. Chiu; C. Y. Lee; Y. Y. Yang; Z. Y. Li; W. C. Lai; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1149/2.003111jes

GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template

D. W. Lin, C. C. Lin, C. H. Chiu, C. Y. Lee, Y. Y. Yang, Z. Y. Li, W. C. Lai, T. C. Lu, H. C. Kuo, S. C. Wang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this study, high crystalline quality 30 m thick gallium nitride (GaN) films were grown by hydride vapor phase epitaxy (HVPE) on sapphire substrate, and the thick GaN films were used for developing high performance light-emitting diodes (LEDs). By using high-resolution X-ray diffraction, the full width at half-maximum (FWHM) of the rocking curve shows that this 30 m thick GaN template had high crystalline quality. In addition, the transmission electron microscopy (TEM) images suggest that threading dislocation densities (TDDs) are almost free in multiple quantum wells (MQWs) for LEDs grown on 30 m thick GaN template. Compared with conventional LEDs grown on sapphire, LEDs grown on 30 m thick GaN template exhibit 26 enhancement of light output at 20 mA.

Original language	English
Pages (from-to)	H1103-H1106
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	11
DOIs	https://doi.org/10.1149/2.003111jes
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/2.003111jes

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title = "GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template",

abstract = "In this study, high crystalline quality 30 m thick gallium nitride (GaN) films were grown by hydride vapor phase epitaxy (HVPE) on sapphire substrate, and the thick GaN films were used for developing high performance light-emitting diodes (LEDs). By using high-resolution X-ray diffraction, the full width at half-maximum (FWHM) of the rocking curve shows that this 30 m thick GaN template had high crystalline quality. In addition, the transmission electron microscopy (TEM) images suggest that threading dislocation densities (TDDs) are almost free in multiple quantum wells (MQWs) for LEDs grown on 30 m thick GaN template. Compared with conventional LEDs grown on sapphire, LEDs grown on 30 m thick GaN template exhibit 26 enhancement of light output at 20 mA.",

author = "Lin, {D. W.} and Lin, {C. C.} and Chiu, {C. H.} and Lee, {C. Y.} and Yang, {Y. Y.} and Li, {Z. Y.} and Lai, {W. C.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",

year = "2011",

doi = "10.1149/2.003111jes",

language = "English",

volume = "158",

pages = "H1103--H1106",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template

AU - Lin, D. W.

AU - Lin, C. C.

AU - Chiu, C. H.

AU - Lee, C. Y.

AU - Yang, Y. Y.

AU - Li, Z. Y.

AU - Lai, W. C.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

PY - 2011

Y1 - 2011

N2 - In this study, high crystalline quality 30 m thick gallium nitride (GaN) films were grown by hydride vapor phase epitaxy (HVPE) on sapphire substrate, and the thick GaN films were used for developing high performance light-emitting diodes (LEDs). By using high-resolution X-ray diffraction, the full width at half-maximum (FWHM) of the rocking curve shows that this 30 m thick GaN template had high crystalline quality. In addition, the transmission electron microscopy (TEM) images suggest that threading dislocation densities (TDDs) are almost free in multiple quantum wells (MQWs) for LEDs grown on 30 m thick GaN template. Compared with conventional LEDs grown on sapphire, LEDs grown on 30 m thick GaN template exhibit 26 enhancement of light output at 20 mA.

AB - In this study, high crystalline quality 30 m thick gallium nitride (GaN) films were grown by hydride vapor phase epitaxy (HVPE) on sapphire substrate, and the thick GaN films were used for developing high performance light-emitting diodes (LEDs). By using high-resolution X-ray diffraction, the full width at half-maximum (FWHM) of the rocking curve shows that this 30 m thick GaN template had high crystalline quality. In addition, the transmission electron microscopy (TEM) images suggest that threading dislocation densities (TDDs) are almost free in multiple quantum wells (MQWs) for LEDs grown on 30 m thick GaN template. Compared with conventional LEDs grown on sapphire, LEDs grown on 30 m thick GaN template exhibit 26 enhancement of light output at 20 mA.

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ER -

GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template

Abstract

All Science Journal Classification (ASJC) codes

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