In this study, high crystalline quality 30 m thick gallium nitride (GaN) films were grown by hydride vapor phase epitaxy (HVPE) on sapphire substrate, and the thick GaN films were used for developing high performance light-emitting diodes (LEDs). By using high-resolution X-ray diffraction, the full width at half-maximum (FWHM) of the rocking curve shows that this 30 m thick GaN template had high crystalline quality. In addition, the transmission electron microscopy (TEM) images suggest that threading dislocation densities (TDDs) are almost free in multiple quantum wells (MQWs) for LEDs grown on 30 m thick GaN template. Compared with conventional LEDs grown on sapphire, LEDs grown on 30 m thick GaN template exhibit 26 enhancement of light output at 20 mA.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry