GaN-based LEDs output power improved by textured GaN/Sapphire interface using in situ SiH 4 treatment process during epitaxial growth

Chih-Ming Tsai, Jinn-Kong Sheu, Wei-Chi Lai, Ming Lun Lee, Shoou-Jinn Chang, C. S. Chang, T. K. Ko, C. F. Shen

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In this study, we demonstrate an in situ roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment SiH 4 treatment) process that forms a thin SiN x layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH 4 treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15% with the use of the SiH 4 treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED.

Original languageEnglish
Article number4799149
Pages (from-to)1275-1280
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number4
DOIs
Publication statusPublished - 2009 Mar 12

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Epitaxial growth
Sapphire
Light emitting diodes
sapphire
light emitting diodes
output
Silanes
silanes
Light scattering
escape
voids
light scattering
Photons
injection
Transmission electron microscopy
transmission electron microscopy
augmentation
photons
Substrates

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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title = "GaN-based LEDs output power improved by textured GaN/Sapphire interface using in situ SiH 4 treatment process during epitaxial growth",
abstract = "In this study, we demonstrate an in situ roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment SiH 4 treatment) process that forms a thin SiN x layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH 4 treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15{\%} with the use of the SiH 4 treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED.",
author = "Chih-Ming Tsai and Jinn-Kong Sheu and Wei-Chi Lai and Lee, {Ming Lun} and Shoou-Jinn Chang and Chang, {C. S.} and Ko, {T. K.} and Shen, {C. F.}",
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AU - Tsai, Chih-Ming

AU - Sheu, Jinn-Kong

AU - Lai, Wei-Chi

AU - Lee, Ming Lun

AU - Chang, Shoou-Jinn

AU - Chang, C. S.

AU - Ko, T. K.

AU - Shen, C. F.

PY - 2009/3/12

Y1 - 2009/3/12

N2 - In this study, we demonstrate an in situ roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment SiH 4 treatment) process that forms a thin SiN x layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH 4 treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15% with the use of the SiH 4 treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED.

AB - In this study, we demonstrate an in situ roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment SiH 4 treatment) process that forms a thin SiN x layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH 4 treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15% with the use of the SiH 4 treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED.

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