GaN-Based LEDs with a chirped multiquantum barrier structure

Yu Yao Lin, Ricky W. Chuang, Shoou Jinn Chang, Shuguang Li, Zhi Yong Jiao, Tsun Kai Ko, S. J. Hon, C. H. Liu

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.

Original languageEnglish
Article number6268320
Pages (from-to)1600-1602
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number18
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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