GaN-based LEDs with a mirror structure and an insulating layer

Nan Ming Lin, Shih Chang Shei, Shoou Jinn Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.

Original languageEnglish
Title of host publication2012 Symposium on Photonics and Optoelectronics, SOPO 2012
DOIs
Publication statusPublished - 2012
Event2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 - Shanghai, China
Duration: 2012 May 212012 May 23

Publication series

Name2012 Symposium on Photonics and Optoelectronics, SOPO 2012

Other

Other2012 International Symposium on Photonics and Optoelectronics, SOPO 2012
CountryChina
CityShanghai
Period12-05-2112-05-23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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