GaN-based LEDs with air voids prepared by laser scribing and chemical etching

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H 3PO 4 and H 2SO 4 solution at 220°C for 5 and 20 min, respectively.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XVI
DOIs
Publication statusPublished - 2012 Mar 5
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
Duration: 2012 Jan 242012 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8278
ISSN (Print)0277-786X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
CountryUnited States
CitySan Francisco, CA
Period12-01-2412-01-26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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