GaN-based LEDs with air voids prepared by laser scribing and chemical etching

S. J. Chang

doi:10.1117/12.913294

GaN-based LEDs with air voids prepared by laser scribing and chemical etching

S. J. Chang

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H ₃PO ₄ and H ₂SO ₄ solution at 220°C for 5 and 20 min, respectively.

Original language	English
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XVI
DOIs	https://doi.org/10.1117/12.913294
Publication status	Published - 2012
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States Duration: 2012 Jan 24 → 2012 Jan 26

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8278
ISSN (Print)	0277-786X

Other

Other	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Country/Territory	United States
City	San Francisco, CA
Period	12-01-24 → 12-01-26

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.913294

Cite this

@inproceedings{cbe0e1dc6214442eaf5191ec667999ae,

title = "GaN-based LEDs with air voids prepared by laser scribing and chemical etching",

abstract = "The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H 3PO 4 and H 2SO 4 solution at 220°C for 5 and 20 min, respectively.",

author = "Chang, {S. J.}",

year = "2012",

doi = "10.1117/12.913294",

language = "English",

isbn = "9780819489210",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Light-Emitting Diodes",

note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI ; Conference date: 24-01-2012 Through 26-01-2012",

}

Chang, SJ 2012, GaN-based LEDs with air voids prepared by laser scribing and chemical etching. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI., 82781E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, United States, 12-01-24. https://doi.org/10.1117/12.913294

GaN-based LEDs with air voids prepared by laser scribing and chemical etching. / Chang, S. J.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. 82781E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8278).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - GaN-based LEDs with air voids prepared by laser scribing and chemical etching

AU - Chang, S. J.

PY - 2012

Y1 - 2012

N2 - The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H 3PO 4 and H 2SO 4 solution at 220°C for 5 and 20 min, respectively.

AB - The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H 3PO 4 and H 2SO 4 solution at 220°C for 5 and 20 min, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84863249056&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863249056&partnerID=8YFLogxK

U2 - 10.1117/12.913294

DO - 10.1117/12.913294

M3 - Conference contribution

AN - SCOPUS:84863249056

SN - 9780819489210

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Light-Emitting Diodes

T2 - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI

Y2 - 24 January 2012 through 26 January 2012

ER -

GaN-based LEDs with air voids prepared by laser scribing and chemical etching

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this