GaN-based LEDs with air voids prepared by laser scribing and chemical etching

S. C. Shei; H. M. Lo; W. C. Lai; W. C. Lin; S. J. Chang

doi:10.1109/LPT.2011.2157966

GaN-based LEDs with air voids prepared by laser scribing and chemical etching

S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, S. J. Chang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The authors report the formation of air-voids at the GaN/cone-shaped- patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5- and 20-min lateral etching, it was found that pyramid-like air-void was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6% and 11.5%, respectively, by immersing the wafer in a mixture of H₃PO₄ and H₂SO₄ solution at 220 °C for 5 and 20 min, respectively.

Original language	English
Article number	5782933
Pages (from-to)	1172-1174
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2011.2157966
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2011.2157966

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title = "GaN-based LEDs with air voids prepared by laser scribing and chemical etching",

abstract = "The authors report the formation of air-voids at the GaN/cone-shaped- patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5- and 20-min lateral etching, it was found that pyramid-like air-void was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6% and 11.5%, respectively, by immersing the wafer in a mixture of H3PO4 and H2SO4 solution at 220 °C for 5 and 20 min, respectively.",

author = "Shei, {S. C.} and Lo, {H. M.} and Lai, {W. C.} and Lin, {W. C.} and Chang, {S. J.}",

note = "Funding Information: Manuscript received March 01, 2011; revised April 06, 2011; accepted May 21, 2011. Date of publication May 31, 2011; date of current version July 27, 2011. This work was granted in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.",

year = "2011",

doi = "10.1109/LPT.2011.2157966",

language = "English",

volume = "23",

pages = "1172--1174",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - GaN-based LEDs with air voids prepared by laser scribing and chemical etching

AU - Shei, S. C.

AU - Lo, H. M.

AU - Lai, W. C.

AU - Lin, W. C.

AU - Chang, S. J.

N1 - Funding Information: Manuscript received March 01, 2011; revised April 06, 2011; accepted May 21, 2011. Date of publication May 31, 2011; date of current version July 27, 2011. This work was granted in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.

PY - 2011

Y1 - 2011

N2 - The authors report the formation of air-voids at the GaN/cone-shaped- patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5- and 20-min lateral etching, it was found that pyramid-like air-void was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6% and 11.5%, respectively, by immersing the wafer in a mixture of H3PO4 and H2SO4 solution at 220 °C for 5 and 20 min, respectively.

AB - The authors report the formation of air-voids at the GaN/cone-shaped- patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5- and 20-min lateral etching, it was found that pyramid-like air-void was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6% and 11.5%, respectively, by immersing the wafer in a mixture of H3PO4 and H2SO4 solution at 220 °C for 5 and 20 min, respectively.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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M1 - 5782933

ER -

GaN-based LEDs with air voids prepared by laser scribing and chemical etching

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