The authors report the formation of air-voids at the GaN/cone-shaped- patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5- and 20-min lateral etching, it was found that pyramid-like air-void was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6% and 11.5%, respectively, by immersing the wafer in a mixture of H3PO4 and H2SO4 solution at 220 °C for 5 and 20 min, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering