GaN-based LEDs with air voids prepared by one-step MOCVD growth

N. M. Lin, S. J. Chang, S. C. Shei, W. C. Lai, Y. Y. Yang, W. C. Lin, H. M. Lo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The authors report the formation of air voids at GaN/cone-shaped pattern sapphire substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like air voids were formed with an average height of 0.98 and 1.9 μm, respectively, on top of each cone of the substrate. It was also found that we can enhance LED output power by 11.5% by etching the wafers for 20 min. It was also found that the simulated results agree well with the experimentally observed data.

Original languageEnglish
Article number5960753
Pages (from-to)2831-2835
Number of pages5
JournalJournal of Lightwave Technology
Volume29
Issue number18
DOIs
Publication statusPublished - 2011 Sep 15

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metalorganic chemical vapor deposition
voids
light emitting diodes
etching
air
cones
scoring
pyramids
sapphire
wafers
output
lasers

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Lin, N. M. ; Chang, S. J. ; Shei, S. C. ; Lai, W. C. ; Yang, Y. Y. ; Lin, W. C. ; Lo, H. M. / GaN-based LEDs with air voids prepared by one-step MOCVD growth. In: Journal of Lightwave Technology. 2011 ; Vol. 29, No. 18. pp. 2831-2835.
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GaN-based LEDs with air voids prepared by one-step MOCVD growth. / Lin, N. M.; Chang, S. J.; Shei, S. C.; Lai, W. C.; Yang, Y. Y.; Lin, W. C.; Lo, H. M.

In: Journal of Lightwave Technology, Vol. 29, No. 18, 5960753, 15.09.2011, p. 2831-2835.

Research output: Contribution to journalArticle

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