GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

Chung Ying Chang; Shoou Jinn Chang; C. H. Liu; Shuguang Li; Evan Chen

doi:10.1109/LPT.2012.2228637

GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

Chung Ying Chang, Shoou Jinn Chang, C. H. Liu, Shuguang Li, Evan Chen

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.

Original language	English
Article number	6363522
Pages (from-to)	88-90
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2012.2228637
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2012.2228637

Cite this

@article{cbd00ae1b1924e5386ee5d0aa451125b,

title = "GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate",

abstract = "We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.",

author = "Chang, {Chung Ying} and Chang, {Shoou Jinn} and Liu, {C. H.} and Shuguang Li and Evan Chen",

year = "2013",

doi = "10.1109/LPT.2012.2228637",

language = "English",

volume = "25",

pages = "88--90",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

AU - Chang, Chung Ying

AU - Chang, Shoou Jinn

AU - Liu, C. H.

AU - Li, Shuguang

AU - Chen, Evan

PY - 2013

Y1 - 2013

N2 - We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.

AB - We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.

UR - http://www.scopus.com/inward/record.url?scp=84871651234&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871651234&partnerID=8YFLogxK

U2 - 10.1109/LPT.2012.2228637

DO - 10.1109/LPT.2012.2228637

M3 - Article

AN - SCOPUS:84871651234

SN - 1041-1135

VL - 25

SP - 88

EP - 90

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 1

M1 - 6363522

ER -

GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this