We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering