GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

Chung Ying Chang, Shoou Jinn Chang, C. H. Liu, Shuguang Li, Evan Chen

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.

Original languageEnglish
Article number6363522
Pages (from-to)88-90
Number of pages3
JournalIEEE Photonics Technology Letters
Volume25
Issue number1
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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