GaN-based LEDs with Ar plasma treatment

D. S. Kuo, K. T. Lam, K. H. Wen, S. J. Chang, T. K. Ko, S. J. Hon

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO 2 layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current.

Original languageEnglish
Pages (from-to)52-55
Number of pages4
JournalMaterials Science in Semiconductor Processing
Issue number1
Publication statusPublished - 2012 Feb

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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