GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

Chung Ying Chang; Shoou Jinn Chang; C. H. Liu; Shuguang Li; T. K. Lin

doi:10.1109/LPT.2012.2216517

GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

Chung Ying Chang, Shoou Jinn Chang, C. H. Liu, Shuguang Li, T. K. Lin

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

Original language	English
Article number	6294429
Pages (from-to)	1809-1811
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2012.2216517
Publication status	Published - 2012 Oct 5

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Chang, C. Y., Chang, S. J., Liu, C. H., Li, S., & Lin, T. K. (2012). GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers. IEEE Photonics Technology Letters, 24(20), 1809-1811. [6294429]. https://doi.org/10.1109/LPT.2012.2216517

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10.1109/LPT.2012.2216517