GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

Chung Ying Chang; Shoou Jinn Chang; C. H. Liu; Shuguang Li; T. K. Lin

doi:10.1109/LPT.2012.2216517

GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

Chung Ying Chang
, Shoou Jinn Chang
, C. H. Liu
, Shuguang Li
, T. K. Lin

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

Original language	English
Article number	6294429
Pages (from-to)	1809-1811
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2012.2216517
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2012.2216517

Cite this

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title = "GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers",

abstract = "In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10\% larger than that of the LED without Si-DD.",

author = "Chang, \{Chung Ying\} and Chang, \{Shoou Jinn\} and Liu, \{C. H.\} and Shuguang Li and Lin, \{T. K.\}",

note = "Funding Information: Manuscript received May 10, 2012; revised August 1, 2012; accepted August 24, 2012. Date of publication September 4, 2012; date of current version September 21, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), in part by the Research Center for Energy Technology and Strategy, in part by NCKU under Projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6.",

year = "2012",

doi = "10.1109/LPT.2012.2216517",

language = "English",

volume = "24",

pages = "1809--1811",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "20",

}

TY - JOUR

T1 - GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

AU - Chang, Chung Ying

AU - Chang, Shoou Jinn

AU - Liu, C. H.

AU - Li, Shuguang

AU - Lin, T. K.

N1 - Funding Information: Manuscript received May 10, 2012; revised August 1, 2012; accepted August 24, 2012. Date of publication September 4, 2012; date of current version September 21, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), in part by the Research Center for Energy Technology and Strategy, in part by NCKU under Projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6.

PY - 2012

Y1 - 2012

N2 - In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

AB - In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

UR - https://www.scopus.com/pages/publications/84866919965

UR - https://www.scopus.com/pages/publications/84866919965#tab=citedBy

U2 - 10.1109/LPT.2012.2216517

DO - 10.1109/LPT.2012.2216517

M3 - Article

AN - SCOPUS:84866919965

SN - 1041-1135

VL - 24

SP - 1809

EP - 1811

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 20

M1 - 6294429

ER -

GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

Abstract

All Science Journal Classification (ASJC) codes

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