GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods

Nan Ming Lin, Shih Chang Shei, Shoou-Jinn Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanorods with the flower shape for GaN-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 3.4 V when the 20mA output powers were 2.36, 2.69, 3.04, 3.24, and 3.0 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of ZnO nanorods on the top of ITO surface did not degrade the electrical properties.

Original languageEnglish
Title of host publication4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479942084
DOIs
Publication statusPublished - 2015 Jun 23
Event4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 - Taipei, Taiwan
Duration: 2015 May 42015 May 6

Publication series

Name4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015

Other

Other4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
CountryTaiwan
CityTaipei
Period15-05-0415-05-06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Lin, N. M., Shei, S. C., & Chang, S-J. (2015). GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods. In 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 [7131991] (4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2015.7131991