TY - JOUR
T1 - GaN-based LEDs with GaN μ-pillars around mesa, patterned substrate, and reflector under pads
AU - Peng, Li Chi
AU - Lai, Wei Chin
AU - Chang, Ming Nan
AU - Shei, Shih Chang
AU - Sheu, Jinn Kong
N1 - Funding Information:
Manuscript received January 07, 2009; revised July 02, 2009. First published August 11, 2009; current version published October 28, 2009. This work was supported by the National Science Council of Taiwan under the Research Grant NSC-96-2221-E-006-290.
PY - 2009/11/15
Y1 - 2009/11/15
N2 - Nitride-based light-emitting diodes (LEDs) with textured sidewall, GaN μ-pillars around mesa region, patterned sapphire substrate (PSS), and highly reflective Ag-Cr-Au electrode pads were fabricated using the conventional lithography method (labeled as experimental LEDs). When a 20-mA injection current was applied, forward voltages were 3.18 and 3.4 V for the conventional and experimental LEDs, respectively. The high 20-mA Vf of LEDs with Ag-Cr-Au electrode pads could be attributed to the fact that the specific contact resistance of n+-GaN-Ag-Cr-Au is slightly higher than that of the n+-GaN-Cr-Au contact. It was found that we could achieve much stronger LED output power with textured sidewalls, GaN μ-pillars around mesa region, PSS, and highly reflective Ag-Cr-Au electrode pads. It was also found that we could enhance LED output power by more than 80% compared with the conventional LEDs.
AB - Nitride-based light-emitting diodes (LEDs) with textured sidewall, GaN μ-pillars around mesa region, patterned sapphire substrate (PSS), and highly reflective Ag-Cr-Au electrode pads were fabricated using the conventional lithography method (labeled as experimental LEDs). When a 20-mA injection current was applied, forward voltages were 3.18 and 3.4 V for the conventional and experimental LEDs, respectively. The high 20-mA Vf of LEDs with Ag-Cr-Au electrode pads could be attributed to the fact that the specific contact resistance of n+-GaN-Ag-Cr-Au is slightly higher than that of the n+-GaN-Cr-Au contact. It was found that we could achieve much stronger LED output power with textured sidewalls, GaN μ-pillars around mesa region, PSS, and highly reflective Ag-Cr-Au electrode pads. It was also found that we could enhance LED output power by more than 80% compared with the conventional LEDs.
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U2 - 10.1109/LPT.2009.2028695
DO - 10.1109/LPT.2009.2028695
M3 - Article
AN - SCOPUS:70350721835
SN - 1041-1135
VL - 21
SP - 1659
EP - 1661
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 22
ER -