GaN-based LEDs with GaN μ-pillars around mesa, patterned substrate, and reflector under pads

Li Chi Peng; Wei Chin Lai; Ming Nan Chang; Shih Chang Shei; Jinn Kong Sheu

doi:10.1109/LPT.2009.2028695

GaN-based LEDs with GaN μ-pillars around mesa, patterned substrate, and reflector under pads

Li Chi Peng
, Wei Chin Lai
, Ming Nan Chang
, Shih Chang Shei
, Jinn Kong Sheu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Nitride-based light-emitting diodes (LEDs) with textured sidewall, GaN μ-pillars around mesa region, patterned sapphire substrate (PSS), and highly reflective Ag-Cr-Au electrode pads were fabricated using the conventional lithography method (labeled as experimental LEDs). When a 20-mA injection current was applied, forward voltages were 3.18 and 3.4 V for the conventional and experimental LEDs, respectively. The high 20-mA V_f of LEDs with Ag-Cr-Au electrode pads could be attributed to the fact that the specific contact resistance of n⁺-GaN-Ag-Cr-Au is slightly higher than that of the n⁺-GaN-Cr-Au contact. It was found that we could achieve much stronger LED output power with textured sidewalls, GaN μ-pillars around mesa region, PSS, and highly reflective Ag-Cr-Au electrode pads. It was also found that we could enhance LED output power by more than 80% compared with the conventional LEDs.

Original language	English
Pages (from-to)	1659-1661
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	22
DOIs	https://doi.org/10.1109/LPT.2009.2028695
Publication status	Published - 2009 Nov 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2009.2028695

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@article{c8ff6770cb82451b8511d24e4befc295,

title = "GaN-based LEDs with GaN μ-pillars around mesa, patterned substrate, and reflector under pads",

abstract = "Nitride-based light-emitting diodes (LEDs) with textured sidewall, GaN μ-pillars around mesa region, patterned sapphire substrate (PSS), and highly reflective Ag-Cr-Au electrode pads were fabricated using the conventional lithography method (labeled as experimental LEDs). When a 20-mA injection current was applied, forward voltages were 3.18 and 3.4 V for the conventional and experimental LEDs, respectively. The high 20-mA Vf of LEDs with Ag-Cr-Au electrode pads could be attributed to the fact that the specific contact resistance of n+-GaN-Ag-Cr-Au is slightly higher than that of the n+-GaN-Cr-Au contact. It was found that we could achieve much stronger LED output power with textured sidewalls, GaN μ-pillars around mesa region, PSS, and highly reflective Ag-Cr-Au electrode pads. It was also found that we could enhance LED output power by more than 80\% compared with the conventional LEDs.",

author = "Peng, \{Li Chi\} and Lai, \{Wei Chin\} and Chang, \{Ming Nan\} and Shei, \{Shih Chang\} and Sheu, \{Jinn Kong\}",

note = "Funding Information: Manuscript received January 07, 2009; revised July 02, 2009. First published August 11, 2009; current version published October 28, 2009. This work was supported by the National Science Council of Taiwan under the Research Grant NSC-96-2221-E-006-290.",

year = "2009",

month = nov,

day = "15",

doi = "10.1109/LPT.2009.2028695",

language = "English",

volume = "21",

pages = "1659--1661",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "22",

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TY - JOUR

T1 - GaN-based LEDs with GaN μ-pillars around mesa, patterned substrate, and reflector under pads

AU - Peng, Li Chi

AU - Lai, Wei Chin

AU - Chang, Ming Nan

AU - Shei, Shih Chang

AU - Sheu, Jinn Kong

N1 - Funding Information: Manuscript received January 07, 2009; revised July 02, 2009. First published August 11, 2009; current version published October 28, 2009. This work was supported by the National Science Council of Taiwan under the Research Grant NSC-96-2221-E-006-290.

PY - 2009/11/15

Y1 - 2009/11/15

N2 - Nitride-based light-emitting diodes (LEDs) with textured sidewall, GaN μ-pillars around mesa region, patterned sapphire substrate (PSS), and highly reflective Ag-Cr-Au electrode pads were fabricated using the conventional lithography method (labeled as experimental LEDs). When a 20-mA injection current was applied, forward voltages were 3.18 and 3.4 V for the conventional and experimental LEDs, respectively. The high 20-mA Vf of LEDs with Ag-Cr-Au electrode pads could be attributed to the fact that the specific contact resistance of n+-GaN-Ag-Cr-Au is slightly higher than that of the n+-GaN-Cr-Au contact. It was found that we could achieve much stronger LED output power with textured sidewalls, GaN μ-pillars around mesa region, PSS, and highly reflective Ag-Cr-Au electrode pads. It was also found that we could enhance LED output power by more than 80% compared with the conventional LEDs.

AB - Nitride-based light-emitting diodes (LEDs) with textured sidewall, GaN μ-pillars around mesa region, patterned sapphire substrate (PSS), and highly reflective Ag-Cr-Au electrode pads were fabricated using the conventional lithography method (labeled as experimental LEDs). When a 20-mA injection current was applied, forward voltages were 3.18 and 3.4 V for the conventional and experimental LEDs, respectively. The high 20-mA Vf of LEDs with Ag-Cr-Au electrode pads could be attributed to the fact that the specific contact resistance of n+-GaN-Ag-Cr-Au is slightly higher than that of the n+-GaN-Cr-Au contact. It was found that we could achieve much stronger LED output power with textured sidewalls, GaN μ-pillars around mesa region, PSS, and highly reflective Ag-Cr-Au electrode pads. It was also found that we could enhance LED output power by more than 80% compared with the conventional LEDs.

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DO - 10.1109/LPT.2009.2028695

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

GaN-based LEDs with GaN μ-pillars around mesa, patterned substrate, and reflector under pads

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