GaN-Based LEDs with hot/cold factor improved by the electron blocking layer

Kin Tak Lam; Shoou Jinn Chang

doi:10.1109/JDT.2014.2345373

GaN-Based LEDs with hot/cold factor improved by the electron blocking layer

Kin Tak Lam, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The authors report the study of 'thermal droop' for GaN-based light-emitting diodes (LEDs) using a single AlGaN layer with various thicknesses as the electron blocking layer (EBL). It was found that the effect of bandgap narrowing at elevated temperatures on the drop of LED output power should be negligibly smaller. It was also found that the inserted EBL could significantly reduce 'thermal droop' due to the effective suppression of electron overflow at elevated temperatures. Furthermore, it was found that we could drastically reduce the output power decrease by about 42% with a properly designed EBL.

Original language	English
Article number	6871281
Pages (from-to)	1078-1082
Number of pages	5
Journal	Journal of Display Technology
Volume	10
Issue number	12
DOIs	https://doi.org/10.1109/JDT.2014.2345373
Publication status	Published - 2014 Dec 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JDT.2014.2345373

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@article{26efb5518b934ff28b3b2e1571de139f,

title = "GaN-Based LEDs with hot/cold factor improved by the electron blocking layer",

abstract = "The authors report the study of 'thermal droop' for GaN-based light-emitting diodes (LEDs) using a single AlGaN layer with various thicknesses as the electron blocking layer (EBL). It was found that the effect of bandgap narrowing at elevated temperatures on the drop of LED output power should be negligibly smaller. It was also found that the inserted EBL could significantly reduce 'thermal droop' due to the effective suppression of electron overflow at elevated temperatures. Furthermore, it was found that we could drastically reduce the output power decrease by about 42% with a properly designed EBL.",

author = "Lam, {Kin Tak} and Chang, {Shoou Jinn}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

month = dec,

day = "1",

doi = "10.1109/JDT.2014.2345373",

language = "English",

volume = "10",

pages = "1078--1082",

journal = "Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "12",

}

TY - JOUR

T1 - GaN-Based LEDs with hot/cold factor improved by the electron blocking layer

AU - Lam, Kin Tak

AU - Chang, Shoou Jinn

PY - 2014/12/1

Y1 - 2014/12/1

N2 - The authors report the study of 'thermal droop' for GaN-based light-emitting diodes (LEDs) using a single AlGaN layer with various thicknesses as the electron blocking layer (EBL). It was found that the effect of bandgap narrowing at elevated temperatures on the drop of LED output power should be negligibly smaller. It was also found that the inserted EBL could significantly reduce 'thermal droop' due to the effective suppression of electron overflow at elevated temperatures. Furthermore, it was found that we could drastically reduce the output power decrease by about 42% with a properly designed EBL.

AB - The authors report the study of 'thermal droop' for GaN-based light-emitting diodes (LEDs) using a single AlGaN layer with various thicknesses as the electron blocking layer (EBL). It was found that the effect of bandgap narrowing at elevated temperatures on the drop of LED output power should be negligibly smaller. It was also found that the inserted EBL could significantly reduce 'thermal droop' due to the effective suppression of electron overflow at elevated temperatures. Furthermore, it was found that we could drastically reduce the output power decrease by about 42% with a properly designed EBL.

UR - http://www.scopus.com/inward/record.url?scp=84913594125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84913594125&partnerID=8YFLogxK

U2 - 10.1109/JDT.2014.2345373

DO - 10.1109/JDT.2014.2345373

M3 - Article

AN - SCOPUS:84913594125

SN - 1551-319X

VL - 10

SP - 1078

EP - 1082

JO - Journal of Display Technology

JF - Journal of Display Technology

IS - 12

M1 - 6871281

ER -

GaN-Based LEDs with hot/cold factor improved by the electron blocking layer

Abstract

All Science Journal Classification (ASJC) codes

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