GaN-based LEDs with mesh ITO p-contact and nanopillars

Wei Chih Lai, P. H. Chen, Li Chuan Chang, Cheng Huang Kuo, Jinn Kong Sheu, Chun Ju Tun, S. C. Shei

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this letter, the authors report the fabrication of GaN-based light-emitting diodes (LEDs) with mesh indium-tin-oxide p-contact and nanopillars on patterned sapphire substrate. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nanopillars inside the mesh regions and on the mesa-etched regions. It was found that 20-mA forward voltage and reverse leakage currents observed from the proposed LED were only slightly larger than those observed from the conventional LEDs. It was also found that output power of the proposed LED was more than 80% larger than that observed from conventional LED prepared on flat sapphire substrate.

Original languageEnglish
Pages (from-to)1293-1295
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number18
Publication statusPublished - 2009 Sep 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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