GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer

Nan Ming Lin, Shih Chang Shei, Shoou Jinn Chang, Xu Feng Zeng

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.

Original languageEnglish
Article number6180073
Pages (from-to)815-817
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number10
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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