GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer

Nan Ming Lin; Shih Chang Shei; Shoou Jinn Chang; Xu Feng Zeng

doi:10.1109/LPT.2012.2188789

GaN-based LEDs with omnidirectional metal underneath an insulating SiO ₂ layer

Nan Ming Lin
, Shih Chang Shei
, Shoou Jinn Chang
, Xu Feng Zeng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO ₂ layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO ₂/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO ₂ layer and the LEDs without a SiO ₂ layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO ₂/Ag layers.

Original language	English
Article number	6180073
Pages (from-to)	815-817
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2012.2188789
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2012.2188789

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title = "GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer",

abstract = "The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1\% and 9.6\% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.",

author = "Lin, \{Nan Ming\} and Shei, \{Shih Chang\} and Chang, \{Shoou Jinn\} and Zeng, \{Xu Feng\}",

note = "Funding Information: Manuscript received June 15, 2011; revised February 12, 2012; accepted February 16, 2012. Date of current version April 13, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, in part by the Center for Micro/Nano Science and Technology, NCKU, under projects from the Ministry of Education, Taiwan, in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 101-D0204-6, and in part by the LED Lighting and Research Center, NCKU, providing assistance with LED measurements.",

year = "2012",

doi = "10.1109/LPT.2012.2188789",

language = "English",

volume = "24",

pages = "815--817",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer

AU - Lin, Nan Ming

AU - Shei, Shih Chang

AU - Chang, Shoou Jinn

AU - Zeng, Xu Feng

N1 - Funding Information: Manuscript received June 15, 2011; revised February 12, 2012; accepted February 16, 2012. Date of current version April 13, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, in part by the Center for Micro/Nano Science and Technology, NCKU, under projects from the Ministry of Education, Taiwan, in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 101-D0204-6, and in part by the LED Lighting and Research Center, NCKU, providing assistance with LED measurements.

PY - 2012

Y1 - 2012

N2 - The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.

AB - The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.

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DO - 10.1109/LPT.2012.2188789

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

M1 - 6180073

ER -

GaN-based LEDs with omnidirectional metal underneath an insulating SiO ₂ layer

Abstract

All Science Journal Classification (ASJC) codes

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