Abstract
The authors propose a simple method to enhance the performances of GaN-based light-emitting diodes (LEDs) with rough surface. By using KOH to selectively smooth the area beneath the p-contact pad, it was found that we could reduce the forward voltage and enhance output power of the GaN-based LEDs. It was also found that wall-plug efficiency (WPE) of the proposed LEDs was 10.3% larger than that of the conventional LEDs with rough surface and 33.9% larger than that of the conventional LEDs with flat surface. Furthermore, it was found that the use of selective KOH etching will not degrade drooping effect of the LEDs.
| Original language | English |
|---|---|
| Article number | 6579669 |
| Pages (from-to) | 27-32 |
| Number of pages | 6 |
| Journal | IEEE/OSA Journal of Display Technology |
| Volume | 10 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2014 Jan |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Chang, S. J., Chang, L. M., Kuo, D. S., Ko, T. K., Hon, S. J., & Li, S. (2014). GaN-based leds with rough surface and selective koh etching. IEEE/OSA Journal of Display Technology, 10(1), 27-32. [6579669]. https://doi.org/10.1109/JDT.2013.2278621