GaN-based leds with rough surface and selective koh etching

Shoou Jinn Chang, L. M. Chang, D. S. Kuo, T. K. Ko, S. J. Hon, Shuguang Li

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The authors propose a simple method to enhance the performances of GaN-based light-emitting diodes (LEDs) with rough surface. By using KOH to selectively smooth the area beneath the p-contact pad, it was found that we could reduce the forward voltage and enhance output power of the GaN-based LEDs. It was also found that wall-plug efficiency (WPE) of the proposed LEDs was 10.3% larger than that of the conventional LEDs with rough surface and 33.9% larger than that of the conventional LEDs with flat surface. Furthermore, it was found that the use of selective KOH etching will not degrade drooping effect of the LEDs.

Original languageEnglish
Article number6579669
Pages (from-to)27-32
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume10
Issue number1
DOIs
Publication statusPublished - 2014 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'GaN-based leds with rough surface and selective koh etching'. Together they form a unique fingerprint.

  • Cite this