GaN-Based LEDs with sapphire debris removed by phosphoric etching

Shoou Jinn Chang; D. S. Kuo; K. T. Lam; K. H. Wen; T. K. Ko; S. J. Hon

doi:10.1109/TCPMT.2011.2167972

GaN-Based LEDs with sapphire debris removed by phosphoric etching

Shoou Jinn Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, S. J. Hon

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H ₃PO ₄ at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.

Original language	English
Article number	6081909
Pages (from-to)	349-353
Number of pages	5
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	2
Issue number	2
DOIs	https://doi.org/10.1109/TCPMT.2011.2167972
Publication status	Published - 2012 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TCPMT.2011.2167972

Cite this

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title = "GaN-Based LEDs with sapphire debris removed by phosphoric etching",

abstract = "The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H 3PO 4 at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.",

author = "Chang, {Shoou Jinn} and Kuo, {D. S.} and Lam, {K. T.} and Wen, {K. H.} and Ko, {T. K.} and Hon, {S. J.}",

note = "Funding Information: Manuscript received June 1, 2011; revised August 16, 2011; accepted August 24, 2011. Date of publication November 15, 2011; date of current version February 3, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, for financially supporting this research, under Contract 100-D0204-6. Recommended for publication by Associate Editor A. Shapiro upon evaluation of reviewers{\textquoteright} comments.",

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doi = "10.1109/TCPMT.2011.2167972",

language = "English",

volume = "2",

pages = "349--353",

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AU - Chang, Shoou Jinn

AU - Kuo, D. S.

AU - Lam, K. T.

AU - Wen, K. H.

AU - Ko, T. K.

AU - Hon, S. J.

N1 - Funding Information: Manuscript received June 1, 2011; revised August 16, 2011; accepted August 24, 2011. Date of publication November 15, 2011; date of current version February 3, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, for financially supporting this research, under Contract 100-D0204-6. Recommended for publication by Associate Editor A. Shapiro upon evaluation of reviewers’ comments.

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N2 - The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H 3PO 4 at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.

AB - The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H 3PO 4 at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.

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GaN-Based LEDs with sapphire debris removed by phosphoric etching

Abstract

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