GaN-based light-emitting diode with sputtered AlN nucleation layer

Cheng Hsiung Yen; Wei Chih Lai; Ya Yu Yang; Chun Kai Wang; Tsun Kai Ko; Schang Jing Hon; Shoou Jinn Chang

doi:10.1109/LPT.2011.2177654

GaN-based light-emitting diode with sputtered AlN nucleation layer

Cheng Hsiung Yen, Wei Chih Lai, Ya Yu Yang, Chun Kai Wang, Tsun Kai Ko, Schang Jing Hon, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced the (002) and (102) X-ray rocking curve widths of the GaN layer from 318.0 to 201.1 and 412.5 to 225.0 arcsec, respectively. The rm 20-V reverse leakage current of the LEDs with the sputtered AlN nucleation layer is about three orders less than that of the LEDs with the in situ AlN nucleation layer. In addition, the LEDs with sputtered AlN nucleation layer could sustain more than 60% passing yield on the ESD test of under a -600-V machine mode, whereas the LEDs with the in situ AlN nucleation layer sustained less than 40% passing yield. Moreover, the 20-mA output power of the LEDs with the sputtered AlN nucleation layer also improved by approximately 5.73% compared with that of the LEDs with the in situ AlN nucleation layer.

Original language	English
Article number	6092445
Pages (from-to)	294-296
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2011.2177654
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "GaN-based light-emitting diode with sputtered AlN nucleation layer",

abstract = "The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced the (002) and (102) X-ray rocking curve widths of the GaN layer from 318.0 to 201.1 and 412.5 to 225.0 arcsec, respectively. The rm 20-V reverse leakage current of the LEDs with the sputtered AlN nucleation layer is about three orders less than that of the LEDs with the in situ AlN nucleation layer. In addition, the LEDs with sputtered AlN nucleation layer could sustain more than 60% passing yield on the ESD test of under a -600-V machine mode, whereas the LEDs with the in situ AlN nucleation layer sustained less than 40% passing yield. Moreover, the 20-mA output power of the LEDs with the sputtered AlN nucleation layer also improved by approximately 5.73% compared with that of the LEDs with the in situ AlN nucleation layer.",

author = "Yen, {Cheng Hsiung} and Lai, {Wei Chih} and Yang, {Ya Yu} and Wang, {Chun Kai} and Ko, {Tsun Kai} and Hon, {Schang Jing} and Chang, {Shoou Jinn}",

note = "Funding Information: Manuscript received September 19, 2011; revised October 25, 2011; accepted November 16, 2011. Date of publication November 29, 2011; date of current version January 27, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6. This work was also supported in part by the National Science Council of Taiwan under Research Grant NSC97-2221-E-006-242-MY3.",

year = "2012",

doi = "10.1109/LPT.2011.2177654",

language = "English",

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T1 - GaN-based light-emitting diode with sputtered AlN nucleation layer

AU - Yen, Cheng Hsiung

AU - Lai, Wei Chih

AU - Yang, Ya Yu

AU - Wang, Chun Kai

AU - Ko, Tsun Kai

AU - Hon, Schang Jing

AU - Chang, Shoou Jinn

N1 - Funding Information: Manuscript received September 19, 2011; revised October 25, 2011; accepted November 16, 2011. Date of publication November 29, 2011; date of current version January 27, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6. This work was also supported in part by the National Science Council of Taiwan under Research Grant NSC97-2221-E-006-242-MY3.

PY - 2012

Y1 - 2012

N2 - The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced the (002) and (102) X-ray rocking curve widths of the GaN layer from 318.0 to 201.1 and 412.5 to 225.0 arcsec, respectively. The rm 20-V reverse leakage current of the LEDs with the sputtered AlN nucleation layer is about three orders less than that of the LEDs with the in situ AlN nucleation layer. In addition, the LEDs with sputtered AlN nucleation layer could sustain more than 60% passing yield on the ESD test of under a -600-V machine mode, whereas the LEDs with the in situ AlN nucleation layer sustained less than 40% passing yield. Moreover, the 20-mA output power of the LEDs with the sputtered AlN nucleation layer also improved by approximately 5.73% compared with that of the LEDs with the in situ AlN nucleation layer.

AB - The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced the (002) and (102) X-ray rocking curve widths of the GaN layer from 318.0 to 201.1 and 412.5 to 225.0 arcsec, respectively. The rm 20-V reverse leakage current of the LEDs with the sputtered AlN nucleation layer is about three orders less than that of the LEDs with the in situ AlN nucleation layer. In addition, the LEDs with sputtered AlN nucleation layer could sustain more than 60% passing yield on the ESD test of under a -600-V machine mode, whereas the LEDs with the in situ AlN nucleation layer sustained less than 40% passing yield. Moreover, the 20-mA output power of the LEDs with the sputtered AlN nucleation layer also improved by approximately 5.73% compared with that of the LEDs with the in situ AlN nucleation layer.

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GaN-based light-emitting diode with sputtered AlN nucleation layer

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