GaN-Based Light-Emitting Diodes Prepared with Shifted Laser Stealth Dicing

Shoou Jinn Chang Chang, L. M. Chang, J. Y. Chen, C. S. Hsu, D. S. Kuo, C. F. Shen, Wei Shou Chen, T. K. Ko

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We propose a simple shifted laser stealth dicing (shifted-LSD) method to enhance output power of GaN-based blue light-emitting diodes (LEDs). Compared with the conventional method with only one nanosecond laser scribing from the front side, we performed two additional picosecond laser scribing on different positions of the backside surface. It was found that we could effectively enhance the LED output power from 132.14 to 139.11 mW using the shifted-LSD without degrading the electrical properties of the devices. It was also found such enhancement should be attributed to the enhanced LEE from the roughened sapphire substrate.

Original languageEnglish
Article number7264979
Pages (from-to)195-199
Number of pages5
JournalJournal of Display Technology
Volume12
Issue number2
DOIs
Publication statusPublished - 2016 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Chang, S. J. C., Chang, L. M., Chen, J. Y., Hsu, C. S., Kuo, D. S., Shen, C. F., Chen, W. S., & Ko, T. K. (2016). GaN-Based Light-Emitting Diodes Prepared with Shifted Laser Stealth Dicing. Journal of Display Technology, 12(2), 195-199. [7264979]. https://doi.org/10.1109/JDT.2015.2478598