GaN-Based Light-Emitting Diodes Prepared with Shifted Laser Stealth Dicing

Shoou Jinn Chang Chang; L. M. Chang; J. Y. Chen; C. S. Hsu; D. S. Kuo; C. F. Shen; Wei Shou Chen; T. K. Ko

doi:10.1109/JDT.2015.2478598

GaN-Based Light-Emitting Diodes Prepared with Shifted Laser Stealth Dicing

Shoou Jinn Chang Chang, L. M. Chang, J. Y. Chen, C. S. Hsu, D. S. Kuo, C. F. Shen, Wei Shou Chen, T. K. Ko

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We propose a simple shifted laser stealth dicing (shifted-LSD) method to enhance output power of GaN-based blue light-emitting diodes (LEDs). Compared with the conventional method with only one nanosecond laser scribing from the front side, we performed two additional picosecond laser scribing on different positions of the backside surface. It was found that we could effectively enhance the LED output power from 132.14 to 139.11 mW using the shifted-LSD without degrading the electrical properties of the devices. It was also found such enhancement should be attributed to the enhanced LEE from the roughened sapphire substrate.

Original language	English
Article number	7264979
Pages (from-to)	195-199
Number of pages	5
Journal	Journal of Display Technology
Volume	12
Issue number	2
DOIs	https://doi.org/10.1109/JDT.2015.2478598
Publication status	Published - 2016 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JDT.2015.2478598

Cite this

@article{dced4b4f71b542479fecda49b7ff965c,

title = "GaN-Based Light-Emitting Diodes Prepared with Shifted Laser Stealth Dicing",

abstract = "We propose a simple shifted laser stealth dicing (shifted-LSD) method to enhance output power of GaN-based blue light-emitting diodes (LEDs). Compared with the conventional method with only one nanosecond laser scribing from the front side, we performed two additional picosecond laser scribing on different positions of the backside surface. It was found that we could effectively enhance the LED output power from 132.14 to 139.11 mW using the shifted-LSD without degrading the electrical properties of the devices. It was also found such enhancement should be attributed to the enhanced LEE from the roughened sapphire substrate.",

author = "Chang, \{Shoou Jinn Chang\} and Chang, \{L. M.\} and Chen, \{J. Y.\} and Hsu, \{C. S.\} and Kuo, \{D. S.\} and Shen, \{C. F.\} and Chen, \{Wei Shou\} and Ko, \{T. K.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2016",

month = feb,

doi = "10.1109/JDT.2015.2478598",

language = "English",

volume = "12",

pages = "195--199",

journal = "Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "2",

}

TY - JOUR

T1 - GaN-Based Light-Emitting Diodes Prepared with Shifted Laser Stealth Dicing

AU - Chang, Shoou Jinn Chang

AU - Chang, L. M.

AU - Chen, J. Y.

AU - Hsu, C. S.

AU - Kuo, D. S.

AU - Shen, C. F.

AU - Chen, Wei Shou

AU - Ko, T. K.

PY - 2016/2

Y1 - 2016/2

N2 - We propose a simple shifted laser stealth dicing (shifted-LSD) method to enhance output power of GaN-based blue light-emitting diodes (LEDs). Compared with the conventional method with only one nanosecond laser scribing from the front side, we performed two additional picosecond laser scribing on different positions of the backside surface. It was found that we could effectively enhance the LED output power from 132.14 to 139.11 mW using the shifted-LSD without degrading the electrical properties of the devices. It was also found such enhancement should be attributed to the enhanced LEE from the roughened sapphire substrate.

AB - We propose a simple shifted laser stealth dicing (shifted-LSD) method to enhance output power of GaN-based blue light-emitting diodes (LEDs). Compared with the conventional method with only one nanosecond laser scribing from the front side, we performed two additional picosecond laser scribing on different positions of the backside surface. It was found that we could effectively enhance the LED output power from 132.14 to 139.11 mW using the shifted-LSD without degrading the electrical properties of the devices. It was also found such enhancement should be attributed to the enhanced LEE from the roughened sapphire substrate.

UR - https://www.scopus.com/pages/publications/84962809801

UR - https://www.scopus.com/inward/citedby.url?scp=84962809801&partnerID=8YFLogxK

U2 - 10.1109/JDT.2015.2478598

DO - 10.1109/JDT.2015.2478598

M3 - Article

AN - SCOPUS:84962809801

SN - 1551-319X

VL - 12

SP - 195

EP - 199

JO - Journal of Display Technology

JF - Journal of Display Technology

IS - 2

M1 - 7264979

ER -

GaN-Based Light-Emitting Diodes Prepared with Shifted Laser Stealth Dicing

Abstract

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