GaN-based light-emitting diodes with air gap array and patterned sapphire substrate

Wei-Chi Lai, Ya Yu Yang, Ying Hong Chen, Jinn-Kong Sheu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrate GaN-based light-emitting diodes (LEDs) with combined air gap array and patterned sapphire substrates (PSSs). The tapered air gap array was formed on the GaN layer with or without PSS through the enhancement of the lateral growth of GaN. With the combination of air gap array and PSS, we achieved a small reverse leakage current because of the improved quality of the lateral growth-induced crystal. The 20-mA output powers of the LEDs with air gap array, PSS, and the combined air gap array and PSS improved by magnitudes of approximately 30.4%, 54.2%, and 72.9%, respectively, compared with those of conventional LEDs. The present study reveals that the LED with combined air gap array and PSS exhibited a large internal quantum efficiency (IQE) and light extraction efficiency (LEE) enhancements of 9.6% and 43.8%, respectively.

Original languageEnglish
Article number5783297
Pages (from-to)1207-1209
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number17
DOIs
Publication statusPublished - 2011 Aug 19

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Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes
air
Substrates
Air
augmentation
Quantum efficiency
Leakage currents
quantum efficiency
leakage
Crystals
output
crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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abstract = "We demonstrate GaN-based light-emitting diodes (LEDs) with combined air gap array and patterned sapphire substrates (PSSs). The tapered air gap array was formed on the GaN layer with or without PSS through the enhancement of the lateral growth of GaN. With the combination of air gap array and PSS, we achieved a small reverse leakage current because of the improved quality of the lateral growth-induced crystal. The 20-mA output powers of the LEDs with air gap array, PSS, and the combined air gap array and PSS improved by magnitudes of approximately 30.4{\%}, 54.2{\%}, and 72.9{\%}, respectively, compared with those of conventional LEDs. The present study reveals that the LED with combined air gap array and PSS exhibited a large internal quantum efficiency (IQE) and light extraction efficiency (LEE) enhancements of 9.6{\%} and 43.8{\%}, respectively.",
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GaN-based light-emitting diodes with air gap array and patterned sapphire substrate. / Lai, Wei-Chi; Yang, Ya Yu; Chen, Ying Hong; Sheu, Jinn-Kong.

In: IEEE Photonics Technology Letters, Vol. 23, No. 17, 5783297, 19.08.2011, p. 1207-1209.

Research output: Contribution to journalArticle

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