GaN-based light-emitting diodes with embedded air void arrays

Yue Shen; Shuguang Li; De Shan Kuo; Shoou Jinn Chang; Kin Tak Lam; Kuo Hsun Wen

doi:10.1116/1.4730028

GaN-based light-emitting diodes with embedded air void arrays

Yue Shen, Shuguang Li, De Shan Kuo, Shoou Jinn Chang, Kin Tak Lam, Kuo Hsun Wen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

Original language	English
Article number	041207
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4730028
Publication status	Published - 2012 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4730028

Cite this

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title = "GaN-based light-emitting diodes with embedded air void arrays",

abstract = "The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.",

author = "Yue Shen and Shuguang Li and Kuo, {De Shan} and Chang, {Shoou Jinn} and Lam, {Kin Tak} and Wen, {Kuo Hsun}",

note = "Funding Information: This work was granted in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU) under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 100-D0204-6, and the LED Lighting and Research Center, NCKU for the assistance in LED related measurements.",

year = "2012",

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doi = "10.1116/1.4730028",

language = "English",

volume = "30",

journal = "Journal of Vacuum Science and Technology B",

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T1 - GaN-based light-emitting diodes with embedded air void arrays

AU - Shen, Yue

AU - Li, Shuguang

AU - Kuo, De Shan

AU - Chang, Shoou Jinn

AU - Lam, Kin Tak

AU - Wen, Kuo Hsun

N1 - Funding Information: This work was granted in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU) under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 100-D0204-6, and the LED Lighting and Research Center, NCKU for the assistance in LED related measurements.

PY - 2012/7

Y1 - 2012/7

N2 - The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

AB - The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

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GaN-based light-emitting diodes with embedded air void arrays

Abstract

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