GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures

Wei Chih Lai, Ya Yu Yang, Li Chi Peng, Shih Wei Yang, Yu Ru Lin, Jinn Kong Sheu

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We demonstrated GaN-based light emitting diodes (LEDs) with different embedded heights of SiO2 pillars and air gap array structures. The air gap on top of the SiO2 pillars were also realized using the enhanced epitaxial lateral overgrowth mode. With the embedded SiO2 pillars and air gap array structures, we achieved a smaller reverse leakage current due to the lateral growth-induced crystal quality improvement. Moreover, under 20 mA current injections, the output powers were 3.04, 4.23, 4.66, and 4.44 mW for conventional LED, LEDs with embedded 200 and 500 nm height of SiO2 pillars and air gaps, 500 nm height of SiO2 pillars and air gaps, and 700 and 400 nm height of SiO2 pillars and air gaps, respectively. We found that the embedded 500 nm height SiO2 pillars and 500 nm height air gap array structures could enhance LED output power by more than 50% due to the enhanced guided-light scattering efficiency in our study.

Original languageEnglish
Article number081103
JournalApplied Physics Letters
Volume97
Issue number8
DOIs
Publication statusPublished - 2010 Aug 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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