GaN-based light-emitting diodes with pillar structures around the mesa region

P. H. Chen, Li Chuan Chang, C. H. Tsai, Y. C. Lee, Wei-Chi Lai, Mount Learn Wu, Cheng Huang Kuo, Jinn-Kong Sheu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This study presents the numerical and experimental demonstrations for the enhancement of light extraction efficiency in nitride-based light-emitting diodes (LEDs) with textured sidewall and micro-sized pillar waveguides (TSMPW) and nano-textured sidewall and nano-pillars (NTSNP) around the mesa. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nano-pillars on the mesa-etched regions. It was found that electrical characteristics observed from the proposed LEDs were near the same as the control samples without the pillars. Output power enhancement of LED with TSMPW was about 11% compared with conventional LEDs, and the output power enhancement of LED was greater than 45% upon replacement of TSMPW with the NTSNP structure. The light extraction efficiency enhancement factors of the LEDs with TSMPW and NTSNP structures simulated by finite-difference time-domain analysis were 16.6% and 23%, respectively.

Original languageEnglish
Article number5440023
Pages (from-to)1066-1071
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume46
Issue number7
DOIs
Publication statusPublished - 2010 Apr 13

Fingerprint

mesas
Light emitting diodes
light emitting diodes
Waveguides
waveguides
augmentation
time domain analysis
Time domain analysis
output
Nanorods
Nitrides
nanorods
nitrides
Masks
Etching
Demonstrations
masks
etching

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chen, P. H. ; Chang, Li Chuan ; Tsai, C. H. ; Lee, Y. C. ; Lai, Wei-Chi ; Wu, Mount Learn ; Kuo, Cheng Huang ; Sheu, Jinn-Kong. / GaN-based light-emitting diodes with pillar structures around the mesa region. In: IEEE Journal of Quantum Electronics. 2010 ; Vol. 46, No. 7. pp. 1066-1071.
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GaN-based light-emitting diodes with pillar structures around the mesa region. / Chen, P. H.; Chang, Li Chuan; Tsai, C. H.; Lee, Y. C.; Lai, Wei-Chi; Wu, Mount Learn; Kuo, Cheng Huang; Sheu, Jinn-Kong.

In: IEEE Journal of Quantum Electronics, Vol. 46, No. 7, 5440023, 13.04.2010, p. 1066-1071.

Research output: Contribution to journalArticle

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AU - Tsai, C. H.

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AU - Lai, Wei-Chi

AU - Wu, Mount Learn

AU - Kuo, Cheng Huang

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