GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer

Cheng Huang Kuo; Shoou Jinn Chang; Yan Kuin Su; Liang Wen Wu; Jone F. Chen; Jinn Kong Sheu; Ji Ming Tsai

doi:10.1143/jjap.42.2270

GaN-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice current spreading layer

Cheng Huang Kuo
, Shoou Jinn Chang
, Yan Kuin Su
, Liang Wen Wu
, Jone F. Chen
, Jinn Kong Sheu
, Ji Ming Tsai

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The electrical properties of the Si-doped n⁺-In_0.23Ga_0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n⁺-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

Original language	English
Pages (from-to)	2270-2272
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.42.2270
Publication status	Published - 2003 Apr

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/jjap.42.2270

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title = "GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer",

abstract = "The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.",

author = "Kuo, \{Cheng Huang\} and Chang, \{Shoou Jinn\} and Su, \{Yan Kuin\} and Wu, \{Liang Wen\} and Chen, \{Jone F.\} and Sheu, \{Jinn Kong\} and Tsai, \{Ji Ming\}",

year = "2003",

month = apr,

doi = "10.1143/jjap.42.2270",

language = "English",

volume = "42",

pages = "2270--2272",

journal = "Japanese Journal of Applied Physics",

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T1 - GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer

AU - Kuo, Cheng Huang

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Wu, Liang Wen

AU - Chen, Jone F.

AU - Sheu, Jinn Kong

AU - Tsai, Ji Ming

PY - 2003/4

Y1 - 2003/4

N2 - The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

AB - The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

UR - https://www.scopus.com/pages/publications/0037671956

UR - https://www.scopus.com/pages/publications/0037671956#tab=citedBy

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DO - 10.1143/jjap.42.2270

M3 - Article

AN - SCOPUS:0037671956

SN - 0021-4922

VL - 42

SP - 2270

EP - 2272

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 B

ER -

GaN-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice current spreading layer

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