GaN-based light emitting diodes with two-step grown GaN quantum barriers

Kin Tak Lam; Wei Heng Lin; Shoou Jinn Chang

doi:10.1166/sam.2016.2945

GaN-based light emitting diodes with two-step grown GaN quantum barriers

Kin Tak Lam
, Wei Heng Lin
, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

Abstract

The authors propose the use of two-step growth method to prepare the quantum barriers (QBs) of GaN-based light-emitting diodes (LEDs). Using this method, it was found that we could achieve higher indium composition in the InGaN well layers and reduce threading dislocation gliding during the growth. With 1000 mA current injection, it was found that we could enhance the LED output power from 672.8 to 775.0 mW and reduce the forward voltage from 7.04 to 6.71 volt by reducing the triethylgallium (TEGa) flow rate from 400 sccm to 50 sccm. Furthermore, it was found that LEDs with two-step grown QBs could effectively alleviate the efficiency droop.

Original language	English
Pages (from-to)	1451-1453
Number of pages	3
Journal	Science of Advanced Materials
Volume	8
Issue number	7
DOIs	https://doi.org/10.1166/sam.2016.2945
Publication status	Published - 2016 Jul 1

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1166/sam.2016.2945

Cite this

@article{fd0338bd5b184d9e8e4b8c7901a307b7,

title = "GaN-based light emitting diodes with two-step grown GaN quantum barriers",

abstract = "The authors propose the use of two-step growth method to prepare the quantum barriers (QBs) of GaN-based light-emitting diodes (LEDs). Using this method, it was found that we could achieve higher indium composition in the InGaN well layers and reduce threading dislocation gliding during the growth. With 1000 mA current injection, it was found that we could enhance the LED output power from 672.8 to 775.0 mW and reduce the forward voltage from 7.04 to 6.71 volt by reducing the triethylgallium (TEGa) flow rate from 400 sccm to 50 sccm. Furthermore, it was found that LEDs with two-step grown QBs could effectively alleviate the efficiency droop.",

author = "Lam, \{Kin Tak\} and Lin, \{Wei Heng\} and Chang, \{Shoou Jinn\}",

note = "Funding Information: Acknowledgments: This work was granted in part by the Advanced Optoelectronic Technology Center, NCKU under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract No. 102-E060. Publisher Copyright: {\textcopyright} 2016 by American Scientific Publishers.",

year = "2016",

month = jul,

day = "1",

doi = "10.1166/sam.2016.2945",

language = "English",

volume = "8",

pages = "1451--1453",

journal = "Science of Advanced Materials",

issn = "1947-2935",

publisher = "American Scientific Publishers",

number = "7",

}

TY - JOUR

T1 - GaN-based light emitting diodes with two-step grown GaN quantum barriers

AU - Lam, Kin Tak

AU - Lin, Wei Heng

AU - Chang, Shoou Jinn

N1 - Funding Information: Acknowledgments: This work was granted in part by the Advanced Optoelectronic Technology Center, NCKU under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract No. 102-E060. Publisher Copyright: © 2016 by American Scientific Publishers.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - The authors propose the use of two-step growth method to prepare the quantum barriers (QBs) of GaN-based light-emitting diodes (LEDs). Using this method, it was found that we could achieve higher indium composition in the InGaN well layers and reduce threading dislocation gliding during the growth. With 1000 mA current injection, it was found that we could enhance the LED output power from 672.8 to 775.0 mW and reduce the forward voltage from 7.04 to 6.71 volt by reducing the triethylgallium (TEGa) flow rate from 400 sccm to 50 sccm. Furthermore, it was found that LEDs with two-step grown QBs could effectively alleviate the efficiency droop.

AB - The authors propose the use of two-step growth method to prepare the quantum barriers (QBs) of GaN-based light-emitting diodes (LEDs). Using this method, it was found that we could achieve higher indium composition in the InGaN well layers and reduce threading dislocation gliding during the growth. With 1000 mA current injection, it was found that we could enhance the LED output power from 672.8 to 775.0 mW and reduce the forward voltage from 7.04 to 6.71 volt by reducing the triethylgallium (TEGa) flow rate from 400 sccm to 50 sccm. Furthermore, it was found that LEDs with two-step grown QBs could effectively alleviate the efficiency droop.

UR - https://www.scopus.com/pages/publications/84988615432

UR - https://www.scopus.com/pages/publications/84988615432#tab=citedBy

U2 - 10.1166/sam.2016.2945

DO - 10.1166/sam.2016.2945

M3 - Article

AN - SCOPUS:84988615432

SN - 1947-2935

VL - 8

SP - 1451

EP - 1453

JO - Science of Advanced Materials

JF - Science of Advanced Materials

IS - 7

ER -

GaN-based light emitting diodes with two-step grown GaN quantum barriers

Abstract

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