GaN-based metal-oxide-semiconductor field-effect transistors

Ching Ting Lee, Ya Lan Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Various fabrication processes including (NH4)2Sx surface treatment and photoelectrochemical oxidation were used to fabricate GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The DC performances, high frequency performances and noise performances of the resulting GaN-based planer and gate-recessed MOS-HEMTs were measured. In view of the nearly similar lattice constant and the same wurtize crystalline structure between ZnO and GaN-based semiconductor, the ZnO insulator was deposited on the GaN-based epitaxial layers of the HEMTs using a vapor cooling condensation system. The ZnO insulator was used as the gate insulator of the GaN-based MOS-HEMTs. The performances of the ZnO/GaN-based MOS-HEMTs were also measured.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
EditorsJia Zhou, Ting-Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479932962
DOIs
Publication statusPublished - 2014 Jan 23
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 2014 Oct 282014 Oct 31

Publication series

NameProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
CountryChina
CityGuilin
Period14-10-2814-10-31

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

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