GaN-based metal-oxide-semiconductor field-effect transistors

Ching-Ting Lee, Ya Lan Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Various fabrication processes including (NH4)2Sx surface treatment and photoelectrochemical oxidation were used to fabricate GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The DC performances, high frequency performances and noise performances of the resulting GaN-based planer and gate-recessed MOS-HEMTs were measured. In view of the nearly similar lattice constant and the same wurtize crystalline structure between ZnO and GaN-based semiconductor, the ZnO insulator was deposited on the GaN-based epitaxial layers of the HEMTs using a vapor cooling condensation system. The ZnO insulator was used as the gate insulator of the GaN-based MOS-HEMTs. The performances of the ZnO/GaN-based MOS-HEMTs were also measured.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
EditorsJia Zhou, Ting-Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479932962
DOIs
Publication statusPublished - 2014 Jan 23
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 2014 Oct 282014 Oct 31

Publication series

NameProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
CountryChina
CityGuilin
Period14-10-2814-10-31

Fingerprint

MOSFET devices
High electron mobility transistors
Metals
Epitaxial layers
Lattice constants
Surface treatment
Condensation
Vapors
Semiconductor materials
Crystalline materials
Cooling
Fabrication
Oxidation
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Lee, C-T., & Chou, Y. L. (2014). GaN-based metal-oxide-semiconductor field-effect transistors. In J. Zhou, & T-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021209] (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021209
Lee, Ching-Ting ; Chou, Ya Lan. / GaN-based metal-oxide-semiconductor field-effect transistors. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).
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title = "GaN-based metal-oxide-semiconductor field-effect transistors",
abstract = "Various fabrication processes including (NH4)2Sx surface treatment and photoelectrochemical oxidation were used to fabricate GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The DC performances, high frequency performances and noise performances of the resulting GaN-based planer and gate-recessed MOS-HEMTs were measured. In view of the nearly similar lattice constant and the same wurtize crystalline structure between ZnO and GaN-based semiconductor, the ZnO insulator was deposited on the GaN-based epitaxial layers of the HEMTs using a vapor cooling condensation system. The ZnO insulator was used as the gate insulator of the GaN-based MOS-HEMTs. The performances of the ZnO/GaN-based MOS-HEMTs were also measured.",
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Lee, C-T & Chou, YL 2014, GaN-based metal-oxide-semiconductor field-effect transistors. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021209, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 14-10-28. https://doi.org/10.1109/ICSICT.2014.7021209

GaN-based metal-oxide-semiconductor field-effect transistors. / Lee, Ching-Ting; Chou, Ya Lan.

Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021209 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Various fabrication processes including (NH4)2Sx surface treatment and photoelectrochemical oxidation were used to fabricate GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The DC performances, high frequency performances and noise performances of the resulting GaN-based planer and gate-recessed MOS-HEMTs were measured. In view of the nearly similar lattice constant and the same wurtize crystalline structure between ZnO and GaN-based semiconductor, the ZnO insulator was deposited on the GaN-based epitaxial layers of the HEMTs using a vapor cooling condensation system. The ZnO insulator was used as the gate insulator of the GaN-based MOS-HEMTs. The performances of the ZnO/GaN-based MOS-HEMTs were also measured.

AB - Various fabrication processes including (NH4)2Sx surface treatment and photoelectrochemical oxidation were used to fabricate GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The DC performances, high frequency performances and noise performances of the resulting GaN-based planer and gate-recessed MOS-HEMTs were measured. In view of the nearly similar lattice constant and the same wurtize crystalline structure between ZnO and GaN-based semiconductor, the ZnO insulator was deposited on the GaN-based epitaxial layers of the HEMTs using a vapor cooling condensation system. The ZnO insulator was used as the gate insulator of the GaN-based MOS-HEMTs. The performances of the ZnO/GaN-based MOS-HEMTs were also measured.

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Lee C-T, Chou YL. GaN-based metal-oxide-semiconductor field-effect transistors. In Zhou J, Tang T-A, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021209. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). https://doi.org/10.1109/ICSICT.2014.7021209