@inproceedings{f63952d0fcc54d689691eae5a6815c13,
title = "GaN-based metal-oxide-semiconductor field-effect transistors",
abstract = "Various fabrication processes including (NH4)2Sx surface treatment and photoelectrochemical oxidation were used to fabricate GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The DC performances, high frequency performances and noise performances of the resulting GaN-based planer and gate-recessed MOS-HEMTs were measured. In view of the nearly similar lattice constant and the same wurtize crystalline structure between ZnO and GaN-based semiconductor, the ZnO insulator was deposited on the GaN-based epitaxial layers of the HEMTs using a vapor cooling condensation system. The ZnO insulator was used as the gate insulator of the GaN-based MOS-HEMTs. The performances of the ZnO/GaN-based MOS-HEMTs were also measured.",
author = "Lee, \{Ching Ting\} and Chou, \{Ya Lan\}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",
year = "2014",
month = jan,
day = "23",
doi = "10.1109/ICSICT.2014.7021209",
language = "English",
series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Jia Zhou and Ting-Ao Tang",
booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
address = "United States",
}