GaN-based MSM photodetectors prepared on patterned sapphire substrates

Shoou Jinn Chang; Y. D. Jhou; Y. C. Lin; S. L. Wu; C. H. Chen; T. C. Wen; L. W. Wu

doi:10.1109/LPT.2008.2004814

GaN-based MSM photodetectors prepared on patterned sapphire substrates

Shoou Jinn Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen, L. W. Wu

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

GaN-based metal-semiconductor-metal ultraviolet photodetectors (PDs) prepared on a patterned sapphire substrate (PSS) and a conventional flat sapphire substrate were both fabricated and characterized. It was found that we can reduce dark leakage current and enhance by about two orders of magnitude by using a PSS. The internal gain of the PDs prepared on a PSS was also much smaller.

Original language	English
Pages (from-to)	1866-1868
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	22
DOIs	https://doi.org/10.1109/LPT.2008.2004814
Publication status	Published - 2008 Nov 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2008.2004814

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title = "GaN-based MSM photodetectors prepared on patterned sapphire substrates",

abstract = "GaN-based metal-semiconductor-metal ultraviolet photodetectors (PDs) prepared on a patterned sapphire substrate (PSS) and a conventional flat sapphire substrate were both fabricated and characterized. It was found that we can reduce dark leakage current and enhance by about two orders of magnitude by using a PSS. The internal gain of the PDs prepared on a PSS was also much smaller.",

author = "Chang, {Shoou Jinn} and Jhou, {Y. D.} and Lin, {Y. C.} and Wu, {S. L.} and Chen, {C. H.} and Wen, {T. C.} and Wu, {L. W.}",

note = "Funding Information: Manuscript received June 13, 2008; revised July 28, 2008. Current version published October 31, 2008. This work was supported by a grant from the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",

year = "2008",

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doi = "10.1109/LPT.2008.2004814",

language = "English",

volume = "20",

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journal = "IEEE Photonics Technology Letters",

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T1 - GaN-based MSM photodetectors prepared on patterned sapphire substrates

AU - Chang, Shoou Jinn

AU - Jhou, Y. D.

AU - Lin, Y. C.

AU - Wu, S. L.

AU - Chen, C. H.

AU - Wen, T. C.

AU - Wu, L. W.

N1 - Funding Information: Manuscript received June 13, 2008; revised July 28, 2008. Current version published October 31, 2008. This work was supported by a grant from the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.

PY - 2008/11/15

Y1 - 2008/11/15

N2 - GaN-based metal-semiconductor-metal ultraviolet photodetectors (PDs) prepared on a patterned sapphire substrate (PSS) and a conventional flat sapphire substrate were both fabricated and characterized. It was found that we can reduce dark leakage current and enhance by about two orders of magnitude by using a PSS. The internal gain of the PDs prepared on a PSS was also much smaller.

AB - GaN-based metal-semiconductor-metal ultraviolet photodetectors (PDs) prepared on a patterned sapphire substrate (PSS) and a conventional flat sapphire substrate were both fabricated and characterized. It was found that we can reduce dark leakage current and enhance by about two orders of magnitude by using a PSS. The internal gain of the PDs prepared on a PSS was also much smaller.

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JO - IEEE Photonics Technology Letters

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ER -

GaN-based MSM photodetectors prepared on patterned sapphire substrates

Abstract

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