Abstract
GaN-based metal-semiconductor-metal ultraviolet photodetectors (PDs) prepared on a patterned sapphire substrate (PSS) and a conventional flat sapphire substrate were both fabricated and characterized. It was found that we can reduce dark leakage current and enhance by about two orders of magnitude by using a PSS. The internal gain of the PDs prepared on a PSS was also much smaller.
Original language | English |
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Pages (from-to) | 1866-1868 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 20 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2008 Nov 15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering