GaN-based p-i-n sensors with ITO contacts

Shoou-Jinn Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, Jinn-Kong Sheu, Wei-Chi Lai, Yu-Cheng Lin, W. S. Chen, C. F. Shen

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 nm, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500°C annealed ITO(70 nm) p-contacts.

Original languageEnglish
Pages (from-to)406-409
Number of pages4
JournalIEEE Sensors Journal
Volume6
Issue number2
DOIs
Publication statusPublished - 2006 Apr 1

Fingerprint

ITO (semiconductors)
sensors
Sensors
Dark currents
dark current
Tin oxides
Electric breakdown
Quantum efficiency
electrical faults
Nitrides
indium oxides
Indium
tin oxides
nitrides
quantum efficiency
Wavelength
Electrodes
electrodes
wavelengths

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Chang, S-J., Ko, T. K., Su, Y. K., Chiou, Y. Z., Chang, C. S., Shei, S. C., ... Shen, C. F. (2006). GaN-based p-i-n sensors with ITO contacts. IEEE Sensors Journal, 6(2), 406-409. https://doi.org/10.1109/JSEN.2006.870151
Chang, Shoou-Jinn ; Ko, T. K. ; Su, Y. K. ; Chiou, Y. Z. ; Chang, C. S. ; Shei, S. C. ; Sheu, Jinn-Kong ; Lai, Wei-Chi ; Lin, Yu-Cheng ; Chen, W. S. ; Shen, C. F. / GaN-based p-i-n sensors with ITO contacts. In: IEEE Sensors Journal. 2006 ; Vol. 6, No. 2. pp. 406-409.
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author = "Shoou-Jinn Chang and Ko, {T. K.} and Su, {Y. K.} and Chiou, {Y. Z.} and Chang, {C. S.} and Shei, {S. C.} and Jinn-Kong Sheu and Wei-Chi Lai and Yu-Cheng Lin and Chen, {W. S.} and Shen, {C. F.}",
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Chang, S-J, Ko, TK, Su, YK, Chiou, YZ, Chang, CS, Shei, SC, Sheu, J-K, Lai, W-C, Lin, Y-C, Chen, WS & Shen, CF 2006, 'GaN-based p-i-n sensors with ITO contacts', IEEE Sensors Journal, vol. 6, no. 2, pp. 406-409. https://doi.org/10.1109/JSEN.2006.870151

GaN-based p-i-n sensors with ITO contacts. / Chang, Shoou-Jinn; Ko, T. K.; Su, Y. K.; Chiou, Y. Z.; Chang, C. S.; Shei, S. C.; Sheu, Jinn-Kong; Lai, Wei-Chi; Lin, Yu-Cheng; Chen, W. S.; Shen, C. F.

In: IEEE Sensors Journal, Vol. 6, No. 2, 01.04.2006, p. 406-409.

Research output: Contribution to journalArticle

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AU - Chang, Shoou-Jinn

AU - Ko, T. K.

AU - Su, Y. K.

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AU - Chang, C. S.

AU - Shei, S. C.

AU - Sheu, Jinn-Kong

AU - Lai, Wei-Chi

AU - Lin, Yu-Cheng

AU - Chen, W. S.

AU - Shen, C. F.

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Chang S-J, Ko TK, Su YK, Chiou YZ, Chang CS, Shei SC et al. GaN-based p-i-n sensors with ITO contacts. IEEE Sensors Journal. 2006 Apr 1;6(2):406-409. https://doi.org/10.1109/JSEN.2006.870151