GaN-based p-i-n sensors with ITO contacts

Shoou-Jinn Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, Jinn-Kong Sheu, Wei-Chi Lai, Yu-Cheng Lin, W. S. Chen, C. F. Shen

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 nm, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500°C annealed ITO(70 nm) p-contacts.

Original languageEnglish
Pages (from-to)406-409
Number of pages4
JournalIEEE Sensors Journal
Volume6
Issue number2
DOIs
Publication statusPublished - 2006 Apr

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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