GaN-based p-type metal-oxide-semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method

Ya Lan Chiou, Li Hsien Huang, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

In this work, a bias-assisted photoelectrochemical (PEC) oxidation method was used to form an oxide insulator for GaN-based p-type metal-oxide- semiconductor (MOS) devices. The inversion breakdown and accumulation breakdown fields of the resulting GaN p-type MOS devices were 11.6 MV cm-1 and 3.7 MV cm-1, respectively. The interface-state density of the GaN p-type MOS devices was 4.18 × 1011 cm-2 eV -1 obtained by a photo-assisted capacitance-voltage measurement method. In addition, the negative fixed oxide charge of 2.4 × 10 12 cm-2 eV-1 was also estimated.

Original languageEnglish
Article number045020
JournalSemiconductor Science and Technology
Volume25
Issue number4
DOIs
Publication statusPublished - 2010 Apr 23

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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