Abstract
A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with verticalconduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.
| Original language | English |
|---|---|
| Pages (from-to) | A371-A381 |
| Journal | Optics Express |
| Volume | 23 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2015 Apr 6 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
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GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure. / Sheu, Jinn-Kong; Chen, Fu Bang; Yen, Wei Yu; Wang, Yen Chin; Liu, Chun Nan; Yeh, Yu Hsiang; Lee, Ming Lun.
In: Optics Express, Vol. 23, No. 7, 06.04.2015, p. A371-A381.Research output: Contribution to journal › Article
TY - JOUR
T1 - GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure
AU - Sheu, Jinn-Kong
AU - Chen, Fu Bang
AU - Yen, Wei Yu
AU - Wang, Yen Chin
AU - Liu, Chun Nan
AU - Yeh, Yu Hsiang
AU - Lee, Ming Lun
PY - 2015/4/6
Y1 - 2015/4/6
N2 - A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with verticalconduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.
AB - A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with verticalconduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.
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U2 - 10.1364/OE.23.00A371
DO - 10.1364/OE.23.00A371
M3 - Article
VL - 23
SP - A371-A381
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 7
ER -