GaN-based planar p-i-n photodetectors with the be-implanted isolation ring

Jei Li Hou, Shoou-Jinn Chang, Meng Chu Chen, C. H. Liu, Ting Jen Hsueh, Jinn-Kong Sheu, Shuguang Li

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The authors report the fabrication of GaN-based planar p-i-n photodetectors (PDs) with and without the Be-implanted isolation ring. With the isolation ring, we achieved a much smaller leakage current below 10 pA. It was also found that the responsivity for the PD with the Be-implanted isolation ring was almost independent of the applied reverse bias. Furthermore, it was found that we could achieve a bias independent and much larger ultraviolet-to-visible rejection ratio to three orders of magnitude. Furthermore, smaller noise-equivalent-power value 8.18 \times \hbox{10}^{-16}\ \hbox{W}$ and larger detectivity 3.2 \times \hbox{10}^{13}\ \hbox{cm}\cdot\hbox{Hz}^{0.5}\cdot \hbox{W}-1 from the PD with the Be-implanted isolation ring.

Original languageEnglish
Article number6423883
Pages (from-to)1178-1182
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume60
Issue number3
DOIs
Publication statusPublished - 2013 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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