GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount

Y. X. Sun; W. S. Chen; S. C. Hung; K. T. Lam; C. H. Liu; Shoou Jinn Chang

doi:10.1109/TADVP.2009.2037806

GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount

Y. X. Sun, W. S. Chen, S. C. Hung, K. T. Lam, C. H. Liu, Shoou Jinn Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

Original language	English
Article number	5405053
Pages (from-to)	433-437
Number of pages	5
Journal	IEEE Transactions on Advanced Packaging
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/TADVP.2009.2037806
Publication status	Published - 2010 May

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/TADVP.2009.2037806

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@article{b636d20592e64eb2ae2bf89b945f0a99,

title = "GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount",

abstract = "The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.",

author = "Sun, {Y. X.} and Chen, {W. S.} and Hung, {S. C.} and Lam, {K. T.} and Liu, {C. H.} and Chang, {Shoou Jinn}",

note = "Funding Information: Manuscript received February 26, 2009; revised October 03, 2009; accepted November 23, 2009. First published February 02, 2010; current version published May 05, 2010. This work was supported by a grant from the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. This work was recommended for publication by Associate Editor A. Shapiro upon evaluation of the reviewers comments.",

year = "2010",

month = may,

doi = "10.1109/TADVP.2009.2037806",

language = "English",

volume = "33",

pages = "433--437",

journal = "IEEE Transactions on Advanced Packaging",

issn = "1521-3323",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount

AU - Sun, Y. X.

AU - Chen, W. S.

AU - Hung, S. C.

AU - Lam, K. T.

AU - Liu, C. H.

AU - Chang, Shoou Jinn

N1 - Funding Information: Manuscript received February 26, 2009; revised October 03, 2009; accepted November 23, 2009. First published February 02, 2010; current version published May 05, 2010. This work was supported by a grant from the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. This work was recommended for publication by Associate Editor A. Shapiro upon evaluation of the reviewers comments.

PY - 2010/5

Y1 - 2010/5

N2 - The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

AB - The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

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JO - IEEE Transactions on Advanced Packaging

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GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount

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