GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount

Y. X. Sun, W. S. Chen, S. C. Hung, K. T. Lam, C. H. Liu, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

Original languageEnglish
Article number5405053
Pages (from-to)433-437
Number of pages5
JournalIEEE Transactions on Advanced Packaging
Issue number2
Publication statusPublished - 2010 May

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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