GaN-based power flip-chip LEDs with Cu submount

S. J. Chang, W. S. Chen, S. C. Shei, C. F. Shen, T. K. Ko, J. M. Tsai, W. C. Lai, J. K. Sheu, A. J. Lin, S. C. Hung

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Nitride-based power flip-chip (FC) LEDs with Cu submount were proposed and prepared. With a much higher thermal conductivity, it was found that we can achieve a lower operation voltage under high-current injections and lower junction temperature from the FC LEDs with Cu submount. Compared with the power FC LEDs with Si submount, the reliability of the proposed device was also better.

Original languageEnglish
Article number4796327
Pages (from-to)1287-1291
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number4
DOIs
Publication statusPublished - 2009 Mar 10

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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