GaN-based power LEDs with CMOS ESD protection circuits

J. J. Horng, Y. K. Su, S. J. Chang, W. S. Chen, S. C. Shei

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A power light-emitting diode (LED) module has been successfully designed and demonstrated by combining GaN-based power LEDs with CMOS electrostatic discharge (ESD) protection circuits through a flip-chip process. It was found that we could enhance the power LED output intensity by 20% by using the flip-chip technology. Lifetimes of flip-chip power LEDs were also found to be better. It was also found that the use of CMOS ESD protection circuits did not degrade the output intensity and lifetime of flip-chip power LEDs. Furthermore, it was found that we could not only significantly enhance the reverse ESD characteristics but could also enhance the positive ESD characteristics of nitride-based LEDs by using the CMOS ESD protection circuits.

Original languageEnglish
Pages (from-to)340-346
Number of pages7
JournalIEEE Transactions on Device and Materials Reliability
Volume7
Issue number2
DOIs
Publication statusPublished - 2007 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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