GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

Chih Chien Lin; Ching Ting Lee

doi:10.1109/LPT.2010.2053701

GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

Chih Chien Lin, Ching Ting Lee

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO₂ and SiO ₂ dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.

Original language	English
Article number	5492161
Pages (from-to)	1291-1293
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	17
DOIs	https://doi.org/10.1109/LPT.2010.2053701
Publication status	Published - 2010 Aug 23

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2010.2053701

Fingerprint Dive into the research topics of 'GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors'. Together they form a unique fingerprint.

Cite this

@article{325afd81a82a413ea9c234c024bcf6dd,

title = "GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors",

abstract = "Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO 2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.",

author = "Lin, {Chih Chien} and Lee, {Ching Ting}",

year = "2010",

month = aug,

day = "23",

doi = "10.1109/LPT.2010.2053701",

language = "English",

volume = "22",

pages = "1291--1293",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "17",

}

TY - JOUR

T1 - GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

AU - Lin, Chih Chien

AU - Lee, Ching Ting

PY - 2010/8/23

Y1 - 2010/8/23

N2 - Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO 2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.

AB - Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO 2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.

UR - http://www.scopus.com/inward/record.url?scp=77955688632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955688632&partnerID=8YFLogxK

U2 - 10.1109/LPT.2010.2053701

DO - 10.1109/LPT.2010.2053701

M3 - Article

AN - SCOPUS:77955688632

VL - 22

SP - 1291

EP - 1293

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 17

M1 - 5492161

ER -