GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

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Abstract

Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO 2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.

Original languageEnglish
Article number5492161
Pages (from-to)1291-1293
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number17
DOIs
Publication statusPublished - 2010 Aug 23

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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