GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

Chih Chien Lin; Ching Ting Lee

doi:10.1109/LPT.2010.2053701

GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

Chih Chien Lin, Ching Ting Lee

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO₂ and SiO ₂ dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.

Original language	English
Article number	5492161
Pages (from-to)	1291-1293
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	17
DOIs	https://doi.org/10.1109/LPT.2010.2053701
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2010.2053701

Cite this

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title = "GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors",

abstract = "Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO 2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.",

author = "Lin, {Chih Chien} and Lee, {Ching Ting}",

note = "Funding Information: Manuscript received May 17, 2010; revised June 09, 2010; accepted June 12, 2010. Date of publication June 28, 2010; date of current version August 11, 2010. This work was supported by the landmark project and Advanced Optoelectronic Technology Center of the National Cheng Kung University, and by the National Science Council of Taiwan.",

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doi = "10.1109/LPT.2010.2053701",

language = "English",

volume = "22",

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journal = "IEEE Photonics Technology Letters",

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T1 - GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

AU - Lin, Chih Chien

AU - Lee, Ching Ting

N1 - Funding Information: Manuscript received May 17, 2010; revised June 09, 2010; accepted June 12, 2010. Date of publication June 28, 2010; date of current version August 11, 2010. This work was supported by the landmark project and Advanced Optoelectronic Technology Center of the National Cheng Kung University, and by the National Science Council of Taiwan.

PY - 2010

Y1 - 2010

N2 - Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO 2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.

AB - Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO 2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.

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GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

Abstract

All Science Journal Classification (ASJC) codes

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