GaN-based schottky barrier photodetectors with a 12-Pair Mg xNy-GaN buffer layer

S. J. Chang; K. H. Lee; P. C. Chang; Y. C. Wang; C. L. Yu; C. H. Kuo; S. L. Wu

doi:10.1109/JQE.2008.2000916

GaN-based schottky barrier photodetectors with a 12-Pair Mg _xN_y-GaN buffer layer

S. J. Chang
, K. H. Lee
, P. C. Chang
, Y. C. Wang
, C. L. Yu
, C. H. Kuo
, S. L. Wu

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair Mg _xN_y-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN-based UV PDs by using the 12-pair Mg_xN _y-GaN buffer layer. With a - 2-V applied bias, it was found that the reverse leakage currents measured from PDs with a single LT GaN buffer layer and that with a 12-pair Mg_xN_y-GaN buffer layer were 4.57 x 10_-6 and 1.44 x 10_-12 A, respectively. It was also found that we could use the 12-pair Mg_xN_y-GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level, and enhance the detectivity.

Original language	English
Pages (from-to)	916-921
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	44
Issue number	10
DOIs	https://doi.org/10.1109/JQE.2008.2000916
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2008.2000916

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@article{9e1562f9204440fb9c67913b582ce84c,

title = "GaN-based schottky barrier photodetectors with a 12-Pair Mg xNy-GaN buffer layer",

abstract = "GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair Mg xNy-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN-based UV PDs by using the 12-pair MgxN y-GaN buffer layer. With a - 2-V applied bias, it was found that the reverse leakage currents measured from PDs with a single LT GaN buffer layer and that with a 12-pair MgxNy-GaN buffer layer were 4.57 x 10-6 and 1.44 x 10-12 A, respectively. It was also found that we could use the 12-pair MgxNy-GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level, and enhance the detectivity.",

author = "Chang, \{S. J.\} and Lee, \{K. H.\} and Chang, \{P. C.\} and Wang, \{Y. C.\} and Yu, \{C. L.\} and Kuo, \{C. H.\} and Wu, \{S. L.\}",

note = "Funding Information: Manuscript received February 22, 2008; revised April 11,2008. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science Technology, National Cheng Kung University, Taiwan (D97-2700) and by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under a project from the Ministry of Education.",

year = "2008",

doi = "10.1109/JQE.2008.2000916",

language = "English",

volume = "44",

pages = "916--921",

journal = "IEEE Journal of Quantum Electronics",

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TY - JOUR

T1 - GaN-based schottky barrier photodetectors with a 12-Pair Mg xNy-GaN buffer layer

AU - Chang, S. J.

AU - Lee, K. H.

AU - Chang, P. C.

AU - Wang, Y. C.

AU - Yu, C. L.

AU - Kuo, C. H.

AU - Wu, S. L.

N1 - Funding Information: Manuscript received February 22, 2008; revised April 11,2008. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science Technology, National Cheng Kung University, Taiwan (D97-2700) and by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under a project from the Ministry of Education.

PY - 2008

Y1 - 2008

N2 - GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair Mg xNy-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN-based UV PDs by using the 12-pair MgxN y-GaN buffer layer. With a - 2-V applied bias, it was found that the reverse leakage currents measured from PDs with a single LT GaN buffer layer and that with a 12-pair MgxNy-GaN buffer layer were 4.57 x 10-6 and 1.44 x 10-12 A, respectively. It was also found that we could use the 12-pair MgxNy-GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level, and enhance the detectivity.

AB - GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair Mg xNy-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN-based UV PDs by using the 12-pair MgxN y-GaN buffer layer. With a - 2-V applied bias, it was found that the reverse leakage currents measured from PDs with a single LT GaN buffer layer and that with a 12-pair MgxNy-GaN buffer layer were 4.57 x 10-6 and 1.44 x 10-12 A, respectively. It was also found that we could use the 12-pair MgxNy-GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level, and enhance the detectivity.

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

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GaN-based schottky barrier photodetectors with a 12-Pair Mg _xN_y-GaN buffer layer

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