GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

Fu Bang Chen, Jinn Kong Sheu, Wei Yu Yen, Yen Chin Wang, Shih Hsien Huang, Chun Nan Liu, Yu Hsiang Yeh, Chih Chiang Chang, Ming Lun Lee

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2 Citations (Scopus)

Abstract

A light-emitting diode (LED) consisting of an ultraviolet (UV) InGaN/AlGaN multiple quantum-well (MQW) p-i-n structure and a ten-pair green unipolar InGaN/GaN MQW grown on the same sapphire substrate was investigated. After a series of device-processing procedures, including wafer bonding and laser liftoff, the proposed UV LED structure, which features a visible indicator formed through selective-area photon recycling and exhibiting a dual-peak spectrum comprising UV and green peaks, was produced. The green peak originated from UV light generated by the electrical pumping of the epitaxially stacked green MQW. The green light emission may practically be used in indicators and warning signs during the operation of UV LEDs. The current-dependent light output of the green peak may further serve as a reference for measuring the output power of the UV peak of the proposed UV LEDs.

Original languageEnglish
Article number7395353
Pages (from-to)1122-1127
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume63
Issue number3
DOIs
Publication statusPublished - 2016 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chen, F. B., Sheu, J. K., Yen, W. Y., Wang, Y. C., Huang, S. H., Liu, C. N., Yeh, Y. H., Chang, C. C., & Lee, M. L. (2016). GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling. IEEE Transactions on Electron Devices, 63(3), 1122-1127. [7395353]. https://doi.org/10.1109/TED.2016.2518698