GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

Fu Bang Chen; Jinn Kong Sheu; Wei Yu Yen; Yen Chin Wang; Shih Hsien Huang; Chun Nan Liu; Yu Hsiang Yeh; Chih Chiang Chang; Ming Lun Lee

doi:10.1109/TED.2016.2518698

GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

Fu Bang Chen, Jinn Kong Sheu, Wei Yu Yen, Yen Chin Wang, Shih Hsien Huang, Chun Nan Liu, Yu Hsiang Yeh, Chih Chiang Chang, Ming Lun Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A light-emitting diode (LED) consisting of an ultraviolet (UV) InGaN/AlGaN multiple quantum-well (MQW) p-i-n structure and a ten-pair green unipolar InGaN/GaN MQW grown on the same sapphire substrate was investigated. After a series of device-processing procedures, including wafer bonding and laser liftoff, the proposed UV LED structure, which features a visible indicator formed through selective-area photon recycling and exhibiting a dual-peak spectrum comprising UV and green peaks, was produced. The green peak originated from UV light generated by the electrical pumping of the epitaxially stacked green MQW. The green light emission may practically be used in indicators and warning signs during the operation of UV LEDs. The current-dependent light output of the green peak may further serve as a reference for measuring the output power of the UV peak of the proposed UV LEDs.

Original language	English
Article number	7395353
Pages (from-to)	1122-1127
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	3
DOIs	https://doi.org/10.1109/TED.2016.2518698
Publication status	Published - 2016 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{9301d10a11a54a2daf2f1a7e82b49ecf,

title = "GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling",

abstract = "A light-emitting diode (LED) consisting of an ultraviolet (UV) InGaN/AlGaN multiple quantum-well (MQW) p-i-n structure and a ten-pair green unipolar InGaN/GaN MQW grown on the same sapphire substrate was investigated. After a series of device-processing procedures, including wafer bonding and laser liftoff, the proposed UV LED structure, which features a visible indicator formed through selective-area photon recycling and exhibiting a dual-peak spectrum comprising UV and green peaks, was produced. The green peak originated from UV light generated by the electrical pumping of the epitaxially stacked green MQW. The green light emission may practically be used in indicators and warning signs during the operation of UV LEDs. The current-dependent light output of the green peak may further serve as a reference for measuring the output power of the UV peak of the proposed UV LEDs.",

author = "Chen, {Fu Bang} and Sheu, {Jinn Kong} and Yen, {Wei Yu} and Wang, {Yen Chin} and Huang, {Shih Hsien} and Liu, {Chun Nan} and Yeh, {Yu Hsiang} and Chang, {Chih Chiang} and Lee, {Ming Lun}",

note = "Funding Information: This work was supported by the Bureau of Central Taiwan Science Park under Grant 104RB04 and in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-104-2112-M-006-009-MY3 and Grant MOST-104-2221-E218-012-MY3. Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = mar,

day = "1",

doi = "10.1109/TED.2016.2518698",

language = "English",

volume = "63",

pages = "1122--1127",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

AU - Chen, Fu Bang

AU - Sheu, Jinn Kong

AU - Yen, Wei Yu

AU - Wang, Yen Chin

AU - Huang, Shih Hsien

AU - Liu, Chun Nan

AU - Yeh, Yu Hsiang

AU - Chang, Chih Chiang

AU - Lee, Ming Lun

N1 - Funding Information: This work was supported by the Bureau of Central Taiwan Science Park under Grant 104RB04 and in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-104-2112-M-006-009-MY3 and Grant MOST-104-2221-E218-012-MY3. Publisher Copyright: © 2016 IEEE.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - A light-emitting diode (LED) consisting of an ultraviolet (UV) InGaN/AlGaN multiple quantum-well (MQW) p-i-n structure and a ten-pair green unipolar InGaN/GaN MQW grown on the same sapphire substrate was investigated. After a series of device-processing procedures, including wafer bonding and laser liftoff, the proposed UV LED structure, which features a visible indicator formed through selective-area photon recycling and exhibiting a dual-peak spectrum comprising UV and green peaks, was produced. The green peak originated from UV light generated by the electrical pumping of the epitaxially stacked green MQW. The green light emission may practically be used in indicators and warning signs during the operation of UV LEDs. The current-dependent light output of the green peak may further serve as a reference for measuring the output power of the UV peak of the proposed UV LEDs.

AB - A light-emitting diode (LED) consisting of an ultraviolet (UV) InGaN/AlGaN multiple quantum-well (MQW) p-i-n structure and a ten-pair green unipolar InGaN/GaN MQW grown on the same sapphire substrate was investigated. After a series of device-processing procedures, including wafer bonding and laser liftoff, the proposed UV LED structure, which features a visible indicator formed through selective-area photon recycling and exhibiting a dual-peak spectrum comprising UV and green peaks, was produced. The green peak originated from UV light generated by the electrical pumping of the epitaxially stacked green MQW. The green light emission may practically be used in indicators and warning signs during the operation of UV LEDs. The current-dependent light output of the green peak may further serve as a reference for measuring the output power of the UV peak of the proposed UV LEDs.

UR - http://www.scopus.com/inward/record.url?scp=84956857605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956857605&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2518698

DO - 10.1109/TED.2016.2518698

M3 - Article

AN - SCOPUS:84956857605

SN - 0018-9383

VL - 63

SP - 1122

EP - 1127

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

M1 - 7395353

ER -

GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

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