GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

C. C. Huang; S. J. Chang; R. W. Chuang; J. C. Lin; Y. C. Cheng; W. J. Lin

doi:10.1016/j.apsusc.2010.04.018

GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

C. C. Huang, S. J. Chang, R. W. Chuang, J. C. Lin, Y. C. Cheng, W. J. Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 °C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission electron microscopy, it was found that the high-temperature step-graded AlGaN intermediate layers can effectively reduce the tensile stress on GaN epitaxial layers. Photoluminescence and Raman measurements also indicate that we can improve the crystal quality of GaN by inserting the step-graded AlGaN intermediate layers.

Original language	English
Pages (from-to)	6367-6370
Number of pages	4
Journal	Applied Surface Science
Volume	256
Issue number	21
DOIs	https://doi.org/10.1016/j.apsusc.2010.04.018
Publication status	Published - 2010 Aug 15

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2010.04.018

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@article{4ead35c93f5247c19f0f044d1e24172b,

title = "GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers",

abstract = "The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 °C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission electron microscopy, it was found that the high-temperature step-graded AlGaN intermediate layers can effectively reduce the tensile stress on GaN epitaxial layers. Photoluminescence and Raman measurements also indicate that we can improve the crystal quality of GaN by inserting the step-graded AlGaN intermediate layers.",

author = "Huang, {C. C.} and Chang, {S. J.} and Chuang, {R. W.} and Lin, {J. C.} and Cheng, {Y. C.} and Lin, {W. J.}",

note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan and in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University , under projects from the Ministry of Education. The authors wish to thank Dr. Chih-Hsin Ko and Dr. Clement H. Wann of TSMC for their helpful discussion and their assistance in TEM analysis, and the Bureau of Energy, Ministry of Economic Affairs, Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.",

year = "2010",

month = aug,

day = "15",

doi = "10.1016/j.apsusc.2010.04.018",

language = "English",

volume = "256",

pages = "6367--6370",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "21",

}

TY - JOUR

T1 - GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

AU - Huang, C. C.

AU - Chang, S. J.

AU - Chuang, R. W.

AU - Lin, J. C.

AU - Cheng, Y. C.

AU - Lin, W. J.

N1 - Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan and in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University , under projects from the Ministry of Education. The authors wish to thank Dr. Chih-Hsin Ko and Dr. Clement H. Wann of TSMC for their helpful discussion and their assistance in TEM analysis, and the Bureau of Energy, Ministry of Economic Affairs, Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.

PY - 2010/8/15

Y1 - 2010/8/15

N2 - The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 °C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission electron microscopy, it was found that the high-temperature step-graded AlGaN intermediate layers can effectively reduce the tensile stress on GaN epitaxial layers. Photoluminescence and Raman measurements also indicate that we can improve the crystal quality of GaN by inserting the step-graded AlGaN intermediate layers.

AB - The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 °C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission electron microscopy, it was found that the high-temperature step-graded AlGaN intermediate layers can effectively reduce the tensile stress on GaN epitaxial layers. Photoluminescence and Raman measurements also indicate that we can improve the crystal quality of GaN by inserting the step-graded AlGaN intermediate layers.

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DO - 10.1016/j.apsusc.2010.04.018

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VL - 256

SP - 6367

EP - 6370

JO - Applied Surface Science

JF - Applied Surface Science

IS - 21

ER -

GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

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