GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

C. C. Huang, S. J. Chang, R. W. Chuang, J. C. Lin, Y. C. Cheng, W. J. Lin

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 °C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission electron microscopy, it was found that the high-temperature step-graded AlGaN intermediate layers can effectively reduce the tensile stress on GaN epitaxial layers. Photoluminescence and Raman measurements also indicate that we can improve the crystal quality of GaN by inserting the step-graded AlGaN intermediate layers.

Original languageEnglish
Pages (from-to)6367-6370
Number of pages4
JournalApplied Surface Science
Volume256
Issue number21
DOIs
Publication statusPublished - 2010 Aug 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers'. Together they form a unique fingerprint.

Cite this