GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

C. Q. Chen; M. E. Gaevski; W. H. Sun; E. Kuokstis; J. P. Zhang; R. S.Q. Fareed; H. M. Wang; J. W. Yang; G. Simin; M. A. Khan; Herbert Paul Maruska; David W. Hill; Mitch M.C. Chou; Bruce Chai

doi:10.1063/1.1516230

GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

C. Q. Chen
, M. E. Gaevski
, W. H. Sun
, E. Kuokstis
, J. P. Zhang
, R. S.Q. Fareed
, H. M. Wang
, J. W. Yang
, G. Simin
, M. A. Khan
, Herbert Paul Maruska
, David W. Hill
, Mitch M.C. Chou
, Bruce Chai

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

We report homoepitaxial GaN growth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition. Scanning electron microscopy, atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (11̄00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (11̄00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, our work forms the basis for developing high performance III-N optoelectronic devices.

Original language	English
Pages (from-to)	3194-3196
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	17
DOIs	https://doi.org/10.1063/1.1516230
Publication status	Published - 2002 Oct 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1516230

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@article{42791d1847af49e1bf027975bd105b87,

title = "GaN homoepitaxy on freestanding (1{\=1}00) oriented GaN substrates",

abstract = "We report homoepitaxial GaN growth on freestanding (1{\=1}00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition. Scanning electron microscopy, atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (1{\=1}00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (1{\=1}00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, our work forms the basis for developing high performance III-N optoelectronic devices.",

author = "Chen, \{C. Q.\} and Gaevski, \{M. E.\} and Sun, \{W. H.\} and E. Kuokstis and Zhang, \{J. P.\} and Fareed, \{R. S.Q.\} and Wang, \{H. M.\} and Yang, \{J. W.\} and G. Simin and Khan, \{M. A.\} and Maruska, \{Herbert Paul\} and Hill, \{David W.\} and Chou, \{Mitch M.C.\} and Bruce Chai",

year = "2002",

month = oct,

day = "21",

doi = "10.1063/1.1516230",

language = "English",

volume = "81",

pages = "3194--3196",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "17",

}

TY - JOUR

T1 - GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

AU - Chen, C. Q.

AU - Gaevski, M. E.

AU - Sun, W. H.

AU - Kuokstis, E.

AU - Zhang, J. P.

AU - Fareed, R. S.Q.

AU - Wang, H. M.

AU - Yang, J. W.

AU - Simin, G.

AU - Khan, M. A.

AU - Maruska, Herbert Paul

AU - Hill, David W.

AU - Chou, Mitch M.C.

AU - Chai, Bruce

PY - 2002/10/21

Y1 - 2002/10/21

N2 - We report homoepitaxial GaN growth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition. Scanning electron microscopy, atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (11̄00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (11̄00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, our work forms the basis for developing high performance III-N optoelectronic devices.

AB - We report homoepitaxial GaN growth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition. Scanning electron microscopy, atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (11̄00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (11̄00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, our work forms the basis for developing high performance III-N optoelectronic devices.

UR - https://www.scopus.com/pages/publications/79956008048

UR - https://www.scopus.com/pages/publications/79956008048#tab=citedBy

U2 - 10.1063/1.1516230

DO - 10.1063/1.1516230

M3 - Article

AN - SCOPUS:79956008048

SN - 0003-6951

VL - 81

SP - 3194

EP - 3196

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

Abstract

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