GaN MESFET growth on vicinal sapphire by MOVPE

Shoou Jinn Chang; Chieh Chih Huang; Jia Ching Lin; Sheng Po Chang; Yi Cheng Cheng; Wen Jen Lin

doi:10.1109/ISDRS.2007.4422370

GaN MESFET growth on vicinal sapphire by MOVPE

Shoou Jinn Chang, Chieh Chih Huang, Jia Ching Lin, Sheng Po Chang, Yi Cheng Cheng, Wen Jen Lin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422370
Publication status	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 2007 Dec 12 → 2007 Dec 14

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	07-12-12 → 07-12-14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2007.4422370

Cite this

@inproceedings{9f82a780b7d14f2986656081d517ab1a,

title = "GaN MESFET growth on vicinal sapphire by MOVPE",

author = "Chang, {Shoou Jinn} and Huang, {Chieh Chih} and Lin, {Jia Ching} and Chang, {Sheng Po} and Cheng, {Yi Cheng} and Lin, {Wen Jen}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422370",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

}

Chang, SJ, Huang, CC, Lin, JC, Chang, SP, Cheng, YC & Lin, WJ 2007, GaN MESFET growth on vicinal sapphire by MOVPE. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422370, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 07-12-12. https://doi.org/10.1109/ISDRS.2007.4422370

TY - GEN

T1 - GaN MESFET growth on vicinal sapphire by MOVPE

AU - Chang, Shoou Jinn

AU - Huang, Chieh Chih

AU - Lin, Jia Ching

AU - Chang, Sheng Po

AU - Cheng, Yi Cheng

AU - Lin, Wen Jen

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949254143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949254143&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422370

DO - 10.1109/ISDRS.2007.4422370

M3 - Conference contribution

AN - SCOPUS:44949254143

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

GaN MESFET growth on vicinal sapphire by MOVPE

Publication series

Other

All Science Journal Classification (ASJC) codes

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