GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors

Y. Z. Chiou, Y. K. Su, S. J. Chang, C. H. Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A detailed study of Schottky barrier contact on n-type GaN and the characterisation of GaN metal-semiconductor-metal photodetectors is reported. Au, Pd, Ni, Pt and Ti were used as Schottky dots and Al was used as an ohmic contact. The barrier, ideality factors and effective Richardson constant were obtained. The large index of interfacial behaviour, S, reveals that the surface pinning of n-GaN is much less than that of a GaAs, GaP and Si. Interdigital metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing different metal contacts on n-GaN, p-GaN and n-In0.2Ga0.8N. The characteristics of the fabricated Schottky MSM photodetectors were studied in detail.

Original languageEnglish
Pages (from-to)115-118
Number of pages4
JournalIEE Proceedings: Optoelectronics
Volume150
Issue number2
DOIs
Publication statusPublished - 2003 Apr 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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