GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors

Y. Z. Chiou; Y. K. Su; S. J. Chang; C. H. Chen

doi:10.1049/ip-opt:20030371

GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors

Y. Z. Chiou, Y. K. Su, S. J. Chang, C. H. Chen

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A detailed study of Schottky barrier contact on n-type GaN and the characterisation of GaN metal-semiconductor-metal photodetectors is reported. Au, Pd, Ni, Pt and Ti were used as Schottky dots and Al was used as an ohmic contact. The barrier, ideality factors and effective Richardson constant were obtained. The large index of interfacial behaviour, S, reveals that the surface pinning of n-GaN is much less than that of a GaAs, GaP and Si. Interdigital metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing different metal contacts on n-GaN, p-GaN and n-In_0.2Ga_0.8N. The characteristics of the fabricated Schottky MSM photodetectors were studied in detail.

Original language	English
Pages (from-to)	115-118
Number of pages	4
Journal	IEE Proceedings: Optoelectronics
Volume	150
Issue number	2
DOIs	https://doi.org/10.1049/ip-opt:20030371
Publication status	Published - 2003 Apr

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Electrical and Electronic Engineering

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10.1049/ip-opt:20030371

Cite this

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title = "GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors",

abstract = "A detailed study of Schottky barrier contact on n-type GaN and the characterisation of GaN metal-semiconductor-metal photodetectors is reported. Au, Pd, Ni, Pt and Ti were used as Schottky dots and Al was used as an ohmic contact. The barrier, ideality factors and effective Richardson constant were obtained. The large index of interfacial behaviour, S, reveals that the surface pinning of n-GaN is much less than that of a GaAs, GaP and Si. Interdigital metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing different metal contacts on n-GaN, p-GaN and n-In0.2Ga0.8N. The characteristics of the fabricated Schottky MSM photodetectors were studied in detail.",

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AU - Chiou, Y. Z.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chen, C. H.

PY - 2003/4

Y1 - 2003/4

N2 - A detailed study of Schottky barrier contact on n-type GaN and the characterisation of GaN metal-semiconductor-metal photodetectors is reported. Au, Pd, Ni, Pt and Ti were used as Schottky dots and Al was used as an ohmic contact. The barrier, ideality factors and effective Richardson constant were obtained. The large index of interfacial behaviour, S, reveals that the surface pinning of n-GaN is much less than that of a GaAs, GaP and Si. Interdigital metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing different metal contacts on n-GaN, p-GaN and n-In0.2Ga0.8N. The characteristics of the fabricated Schottky MSM photodetectors were studied in detail.

AB - A detailed study of Schottky barrier contact on n-type GaN and the characterisation of GaN metal-semiconductor-metal photodetectors is reported. Au, Pd, Ni, Pt and Ti were used as Schottky dots and Al was used as an ohmic contact. The barrier, ideality factors and effective Richardson constant were obtained. The large index of interfacial behaviour, S, reveals that the surface pinning of n-GaN is much less than that of a GaAs, GaP and Si. Interdigital metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing different metal contacts on n-GaN, p-GaN and n-In0.2Ga0.8N. The characteristics of the fabricated Schottky MSM photodetectors were studied in detail.

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GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors

Abstract

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