GaN metal-semiconductor-metal photodetectoi with SiN/GaN nucleation layer

Y. K. Su, S. J. Chang, Y. D. Jhou, S. L. Wu, C. H. Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this paper, GaN metal-semiconductor-metal (MSM) photodetectors with SiN/GaN nucleation layer were proposed and fabricated. Compared with the GaN MSM photodetector with conventional single low-temperature GaN nucleation layer, it was found that we achieved much smaller dark current and much lower bias-dependent photocurrent. We also achieved much lower bias-dependent spectral response and larger ratio of photoresponse at 360-450 nm from the photodetector with SiN/GaN nucleation layer. Furthermore, it was found that we can significantly reduce noise-equivalent power (NEP) and enhance normalized detectivity by using the SiN/GaN nucleation layer.

Original languageEnglish
Article number4631457
Pages (from-to)1693-1697
Number of pages5
JournalIEEE Sensors Journal
Volume8
Issue number10
DOIs
Publication statusPublished - 2008 Oct 1

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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