GaN metal-semiconductor-metal photodetectors prepared on nanorod template

S. J. Chang, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

Original languageEnglish
Article number14
Pages (from-to)625-627
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number9
Publication statusPublished - 2010 Apr 16

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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